Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices
This paper presents an evaluation of the transient performance of an optoelectronic integrated device. This device is composed of a quantum well infrared photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting diode (LED). It is called as QWIP-HBT-LED optoelectronic i...
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| Date: | 2009 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118871 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | This paper presents an evaluation of the transient performance of an
optoelectronic integrated device. This device is composed of a quantum well infrared
photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting
diode (LED). It is called as QWIP-HBT-LED optoelectronic integrated device.
Evaluation of its transient response is based on the frequency response of the constituent
devices. Analytical expressions describing the transient behavior, output derivative as a
measure of speed, and the rise time are derived. The numerical results show that the
transient performance of the version under consideration is mainly based on the
individual quantum efficiencies and is improved with their growth. The device speed and
rise time are enhanced with the increase of the cut-off frequency of HBT. |
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