Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices
This paper presents an evaluation of the transient performance of an optoelectronic integrated device. This device is composed of a quantum well infrared photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting diode (LED). It is called as QWIP-HBT-LED optoelectronic i...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Цитувати: | Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. |
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irk-123456789-1188712017-06-01T03:04:25Z Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices Eladl, Sh.M. Nasr, A. Aboshosha, A. This paper presents an evaluation of the transient performance of an optoelectronic integrated device. This device is composed of a quantum well infrared photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting diode (LED). It is called as QWIP-HBT-LED optoelectronic integrated device. Evaluation of its transient response is based on the frequency response of the constituent devices. Analytical expressions describing the transient behavior, output derivative as a measure of speed, and the rise time are derived. The numerical results show that the transient performance of the version under consideration is mainly based on the individual quantum efficiencies and is improved with their growth. The device speed and rise time are enhanced with the increase of the cut-off frequency of HBT. 2009 Article Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 85.60.-q, Dw, Jb http://dspace.nbuv.gov.ua/handle/123456789/118871 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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English |
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This paper presents an evaluation of the transient performance of an
optoelectronic integrated device. This device is composed of a quantum well infrared
photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting
diode (LED). It is called as QWIP-HBT-LED optoelectronic integrated device.
Evaluation of its transient response is based on the frequency response of the constituent
devices. Analytical expressions describing the transient behavior, output derivative as a
measure of speed, and the rise time are derived. The numerical results show that the
transient performance of the version under consideration is mainly based on the
individual quantum efficiencies and is improved with their growth. The device speed and
rise time are enhanced with the increase of the cut-off frequency of HBT. |
| format |
Article |
| author |
Eladl, Sh.M. Nasr, A. Aboshosha, A. |
| spellingShingle |
Eladl, Sh.M. Nasr, A. Aboshosha, A. Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Eladl, Sh.M. Nasr, A. Aboshosha, A. |
| author_sort |
Eladl, Sh.M. |
| title |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_short |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_full |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_fullStr |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_full_unstemmed |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_sort |
dynamic characteristics of qwip-hbt-led optoelectronic integrated devices |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118871 |
| citation_txt |
Dynamic characteristics of QWIP-HBT-LED
optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT eladlshm dynamiccharacteristicsofqwiphbtledoptoelectronicintegrateddevices AT nasra dynamiccharacteristicsofqwiphbtledoptoelectronicintegrateddevices AT aboshoshaa dynamiccharacteristicsofqwiphbtledoptoelectronicintegrateddevices |
| first_indexed |
2025-07-08T14:48:54Z |
| last_indexed |
2025-07-08T14:48:54Z |
| _version_ |
1837090613647900672 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 3. P. 260-263.
© 2009, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
260
PACS 85.60.-q, Dw, Jb
Dynamic characteristics of QWIP-HBT-LED
optoelectronic integrated devices
Sh.M. Eladl, A. Nasr, and A. Aboshosha
Radiation Engineering Department, 3 Ahmed Elzomor Str., NCRRT, P.O. Box 29,
Nasr City, Atomic Energy Authority, Cairo, Egypt
Abstract. This paper presents an evaluation of the transient performance of an
optoelectronic integrated device. This device is composed of a quantum well infrared
photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting
diode (LED). It is called as QWIP-HBT-LED optoelectronic integrated device.
Evaluation of its transient response is based on the frequency response of the constituent
devices. Analytical expressions describing the transient behavior, output derivative as a
measure of speed, and the rise time are derived. The numerical results show that the
transient performance of the version under consideration is mainly based on the
individual quantum efficiencies and is improved with their growth. The device speed and
rise time are enhanced with the increase of the cut-off frequency of HBT.
Keywords: optoelectronic integrated device, quantum well infrared photodetector, light
emitting diode, heterojunction bipolar transistor.
Manuscript received 30.03.09; accepted for publication 14.05.09; published online 15.05.09.
1. Introduction
For optical image processing applications, it is necessary
to focus on devices and components that can detect,
process, and transmit information with great adaptability
and better efficiency [1]. Integration of a quantum well
infrared photodetector (QWIP) and a light emitting
diode (LED) is an effective method to obtain
optoelectronic integrated device that can be used as a
pixel sensitive to far or middle infrared radiation with
near infrared output [2]. The previous studies focused on
fabrication and analysis of the static device performance,
however, they did not analyze the transient behavior of
the device [3-5].
Recently [6], evaluation of a novel device based
on integration of QWIP, heterojunction bipolar transistor
(HBT), and LED for up-conversion of middle infrared
into near infrared (visible) radiation has been presented.
It was shown that the external quantum efficiency can be
of the order of unity that can provide significant
advantages of QWIP-HBT-LED based focal plane arrays
(FPAs) over the FPAs of other types. The effect of
interface recombination and self-absorption within the
LED active region on the efficiency of QWIP-HBT-LED
integrated device was studied by [7]. It was observed
that the quantum conversion efficiency of the device
under consideration was lowered for self-absorption and
interface recombination within the recombination region
of the LED.
Operation of this device can be explained as
follows: the input light is converted to photogenerated
carriers through the QWIP, the QWIP output electric
signal is amplified by the HBT and the LED is driven by
the output amplified signal injected from the HBT and
emits an intensified light of near infrared or visible
radiation.
Fig. 1 shows the schematic layer structure of the
device under study. The paper is organized as follows.
Formulation of the specified parameters that describe the
transient response, derivative, and rise time is presented
in this section. The generated curves as results are
outlined and discussed in Section 3. Finally, conclusion
of the work and some important notes for the continuity
of the research in this subject have been discussed in
Section 4.
2. Theoretical analysis
To understand the transient response of the device version
under study, it is important to investigate the transient
response of each element that constitutes it. The
recognition of the characteristic equation describing the
overall frequency response becomes available when the
frequency response equation of each element is known.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 3. P. 260-263.
© 2009, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
261
Fig. 1. Schematic structure of QWIP-HBT-LED device [6].
With account of the frequency response for the
constituent devices described as in Refs [8, 9], the
frequency response of QWIP-HBT-LED can be derived
as:
.
111
ωω
LEDHBTQWIP
LEDHBTQWIP
LEDHBTQWIP
JJJ
c
(1)
Here, QWIP , HBT , and LED are the
quantum efficiencies for QWIP, HBT, and LED,
respectively. Also, QWIP , HBT , and LED are the cut-
off frequency of QWIP, HBT, and LED, respectively,
and is frequency of the incident infrared image.
The Laplace transform of the above equation can
be expressed as:
.
1
)(
LEDHBTQWIPLED
HBTQWIP
QWIPHBTLEDHBT
QWIPLED
QWIPHBTQWIPLED
HBTLED
LEDHBTQWIP
LED
HBT
QWIP
t
t
t
e
e
e
t
(2)
The final state quantum efficiency of the structure
can be expressed as in Ref. [6]
LEDHBTQWIP . (3)
The derivative of the quantum efficiency of the
device with respect to time denoted by is expressed
by
td
td
t
)(
)(
, which describes how fast the quantum
efficiency changes with time, this quantity can be
expressed as:
LEDHBTLEDQWIP
HBTQWIPLEDHBT
HBTQWIPLEDQWIP
LED
HBT
QWIP
)(
t
t
t
e
e
e
dt
td
, (4)
where
LEDHBTQWIPLEDHBTQWIP . (5)
The rise time of the QWIP-HBT-LED is the time
needed for the quantum efficiency to reach the final
value f of the quantum efficiency in the final state. By
using the approximation LEDQWIPHBT , the
rise time
LEDHBTQWIPLEDHBTQWIPHBT
ln
1 D
Rt ,
(6)
where
.2
HBTHBTLEDLEDQWIPHBTQWIP
LEDHBTLEDHBTQWIP
2
HBTLEDHBTQWIP
LEDQWIPLEDHBTQWIP
HBTQWIPLEDHBTQWIP
f
D
(7)
3. Results and discussions
The device parameters used in the following calculations
are as follows: Hz108
HBT , Hz109
QWIP ,
Hz1010
LED , and 6.0ηη LEDHBTQWIP . The input
infrared radiation is assumed to be a step function in
time. The transient response of the quantum efficiency
of QWIP-HBT-LED device is shown in Fig. 2. It can be
seen that the quantum efficiency increases with time
until approaches a definite and stable value. This value is
dependent on the values of the quantum efficiencies of
the constituent devices. The cut-off frequency of HBT
has the dominant effect on the arrival time to this
definite value, while the cut-off frequency for both
QWIP and LED has no effect on this arrival time.
Fig. 3 shows the time dependence of the derivative
of the quantum conversion (which describes how fast the
quantum efficiency changes with time) at different
values of HBT , it can be seen that the output derivative
increases with the increase of HBT at any time. At early
time, the quantum efficiency changes with an increasing
derivative until arrives a peak value and begins to
decrease in derivative with time after that. This is due to
the cut-off frequency of HBT is lower than those of both
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 3. P. 260-263.
© 2009, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
262
R
is
e
ti
m
e,
1
0-8
s
8HBT
6HBT
10HBT
Fig. 5. Rise time versus quantum efficiency at different
HBT values.
6HBT
8HBT
10HBT
Q
ua
n
tu
m
e
ff
ic
ie
n
cy
, η
(
t)
Time, 10-8 s
Fig. 2. Dynamic response of QWIP-HBT-LED integrated
device.
6HBT
10HBT
8HBT
O
u
tp
ut
d
er
iv
at
iv
e,
1
07 s
-1
Time, 10-9 s
Fig. 3. Variation of quantum efficiency derivative with time.
810HBT
8106HBT
8103HBT
Time, 10-9s
O
u
tp
ut
d
er
iv
at
iv
e,
1
07 s
-1
Fig. 4. Dependence of the output derivative on time.
QWIP and LED. While Fig. 4 shows the time
dependence of the derivative of the quantum conversion
at different values of HBT , it can be seen that the cut-
off frequency of HBT has a major effect on the behavior
of the quantum conversion derivative, as it is rapidly
decreased at higher values of HBT , while HBT has no
effect on the arrival time peak value of output derivative.
The dependence of the rise time of the device on
the quantum efficiency is shown in Fig. 5. It is clear
from this figure that, as the final value of quantum
efficiency is increased, the rise time to this value is also
increased, because the difference between the initial and
final values is increased, which requires more time to
reach this final value and hence the increase in rise time
of the device. Also, the quantum efficiency of HBT
causes an enhancement of the output, and rise time is
increased as a result.
4. Conclusion and future work
Analytical modeling of the transient performance of an
optoelectronic integrated device is presented. The device
under study is composed of a quantum well infrared
photodetector, a heterojunction bipolar transistor and a
light emitting diode. The modeling is based on the
frequency response of the constituent devices. The
analytical expressions describing the transient
performance are derived. The results show that the
quantum efficiency of HBT causes an enhancement of
the output, and rise time is increased as a result. The cut-
off frequency of HBT has a major effect on the behavior
of the quantum conversion derivative, as it rapidly
decreased at higher values of HBT , while it has no
effect on the arrival time peak value of output derivative.
Also, the cut-off frequency of QWIP and LED has no
effect on both the rise time and the output derivative of
the device. As a future extension to this study, modeling
of this device by the use of its equivalent circuit is
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009. V. 12, N 3. P. 260-263.
© 2009, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
263
planned to show the effect of all interesting parameters
on the static characteristics.
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