Peculiarities of neutron irradiation influence on GaP light-emitting structures
GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier concentration, which is caused by their captur...
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| Datum: | 2009 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118874 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Peculiarities of neutron irradiation influence on GaP light-emitting structures / P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 276-279. — Бібліогр.: 8 назв. — англ. |
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