Mapping between two models of etching process
We consider two models for the etching processes using numerical simulations based on cellular-automata discrete-lattice approach. In one model we use a uniform etching probability for each surface site. In another model the etching probability at a given site depends on the local environment of t...
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| Datum: | 2007 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
2007
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| Schriftenreihe: | Condensed Matter Physics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118950 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Mapping between two models of etching process / T. Patsahan, A. Taleb, J. Stafiej, J.-P. Badiali // Condensed Matter Physics. — 2007. — Т. 10, № 4(52). — С. 579-585. — Бібліогр.: 12 назв. — англ. |