Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C
By using the Faraday method and complex of electro-physical studies (Hall effect, ESR, etc.) the features of magnetic susceptibility (χ) of p-Si(B) crystals grown in “vacancy” regime and annealed at 450 °C are studied. It is demonstrated that the presence of deep thermodonors with the ionization...
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| Datum: | 2008 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119052 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C / V.М. Babych, M.M. Luchkevych, Yu.V. Pavlovskyy, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 226-229. — Бібліогр.: 9 назв. — англ. |