Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures
It is shown, that in heterostructures based on A³B⁵ compounds acoustic emission occurrence, current and light fluctuations, evolution electroluminescence spectrums, current-voltage characteristics degradation occur simultaneously and has the common origin.
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Zitieren: | Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures / А.I. Vlasenko, O.V. Lyashenko, P.F. Oleksenko, V.P. Veleschuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 230-235. — Бібліогр.: 22 назв. — англ. |
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irk-123456789-1190542017-06-04T03:02:52Z Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures Vlasenko, A.I. Lyashenko, O.V. Oleksenko, P.F. Veleschuk, V.P. It is shown, that in heterostructures based on A³B⁵ compounds acoustic emission occurrence, current and light fluctuations, evolution electroluminescence spectrums, current-voltage characteristics degradation occur simultaneously and has the common origin. 2008 Article Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures / А.I. Vlasenko, O.V. Lyashenko, P.F. Oleksenko, V.P. Veleschuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 230-235. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 43.35+d, 43.50+y, 72.70+m, 73.50.TD, 78.60.Fi, 78.66.Fd http://dspace.nbuv.gov.ua/handle/123456789/119054 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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English |
| description |
It is shown, that in heterostructures based on A³B⁵
compounds acoustic
emission occurrence, current and light fluctuations, evolution electroluminescence
spectrums, current-voltage characteristics degradation occur simultaneously and has the
common origin. |
| format |
Article |
| author |
Vlasenko, A.I. Lyashenko, O.V. Oleksenko, P.F. Veleschuk, V.P. |
| spellingShingle |
Vlasenko, A.I. Lyashenko, O.V. Oleksenko, P.F. Veleschuk, V.P. Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vlasenko, A.I. Lyashenko, O.V. Oleksenko, P.F. Veleschuk, V.P. |
| author_sort |
Vlasenko, A.I. |
| title |
Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures |
| title_short |
Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures |
| title_full |
Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures |
| title_fullStr |
Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures |
| title_full_unstemmed |
Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures |
| title_sort |
fluctuations of current, electroluminescence and acoustic emission in light-emitting а³в⁵ heterostructures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2008 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119054 |
| citation_txt |
Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures / А.I. Vlasenko, O.V. Lyashenko, P.F. Oleksenko, V.P. Veleschuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 230-235. — Бібліогр.: 22 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT vlasenkoai fluctuationsofcurrentelectroluminescenceandacousticemissioninlightemittinga3v5heterostructures AT lyashenkoov fluctuationsofcurrentelectroluminescenceandacousticemissioninlightemittinga3v5heterostructures AT oleksenkopf fluctuationsofcurrentelectroluminescenceandacousticemissioninlightemittinga3v5heterostructures AT veleschukvp fluctuationsofcurrentelectroluminescenceandacousticemissioninlightemittinga3v5heterostructures |
| first_indexed |
2025-07-08T15:09:19Z |
| last_indexed |
2025-07-08T15:09:19Z |
| _version_ |
1837091899008090112 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008. V. 11, N32. P. 230-235.
© 2008, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
230
PACS 43.35+d, 43.50+y, 72.70+m, 73.50.TD, 78.60.Fi, 78.66.Fd
Fluctuations of current, electroluminescence
and acoustic emission in light-emitting А3В5 heterostructures
А.I. Vlasenko1, O.V. Lyashenko2, P.F. Oleksenko1, V.P. Veleschuk1
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky 03028 Kyiv, Ukraine
2Taras Shevchenko Kyiv National University,
2, Academician Glushkov Ave., 03022 Kyiv, Ukraine;
e-mail: lyashenk@univ.kiev.ua
Abstract. It is shown, that in heterostructures based on A3B5 compounds acoustic
emission occurrence, current and light fluctuations, evolution electroluminescence
spectrums, current-voltage characteristics degradation occur simultaneously and has the
common origin.
Keywords: acoustic emission, light fluctuation, current fluctuation, electroluminescence
spectrum, СVC.
Manuscript received 29.05.08; accepted for publication 20.06.08; published online 15.09.08.
1. Introduction
The question on the superfluous electric noise nature of
semiconductor devices remains opened though the
sufficient attention is paid to it. Character of these noises
allows assuming, that their source can have not electric
nature. For example, in [1] it was observed, as a result of
nonlinear acoustoelectric transformation (convolutions
of external ultrasound with a flowing alternating current,
[2]), occurrence wide electric noise spectrum in
semiconductor devices at influence on them is essential
more narrow-band acoustic noise. In paper [3] in light-
emitting structures at direct current passage correlation
between optical and electric fluctuations and acoustic
noise - acoustic emission (АE) materials was observed.
Later, by authors [4] it was observed at long external
influence of ultrasound monotonous reduction of
intensity and distortion of electroluminescence (EL)
spectrum of light-emitting structure and their restoration
after the stopping of external influence.
АE - spontaneous chaotic radiations of the pulse
acoustic waves [5, 6], caused by failure of the
superfluous internal mechanical or induced
thermomechanical strains at additional superthreshold
external influence. АE at current flowing in
semiconductor devices it is characterized by short-term
creation of thermomechanical strains in microvolumes of
epitaxial structures, especially on border of
heterojunction, and also probable in the top layers of a
crystal (substrate) which failure is accompanied by
acoustic impulses radiation. The local strain value before
failure by different estimations achieves 106-108 Pа.
Also it is known, that the average value of mechanical
strain in a GaN film on a sapphire substrate achieves
~109 Pа [7]. Thus, АE it can be considered as the source
of internal acoustic (ultrasonic) fluctuations comparable,
or surpassing on power external sources [1], сhanging
electrophysical characteristics of structure, and,
simultaneously, as the process which has arisen at
external influence [3, 6, 8, 10, 11], in particular –
mechanical [11].
Arising (at AE) short-term mechanical strains can
lead to spontaneous current oscillations of various value,
which is lead to change of own noise level of the device.
It is necessary to note, that distinguish high-energy
burst (discrete) АE, which is caused usually by change
of a condition (“operation”) dislocations complexes,
two- or three-dimensional defects, and low-energy
continuous АE, which is caused by usually synchronous
movement (fluctuation, with tearing-fastening on
stoppers) groups of dislocations loops.
AE occurrence means that irreversible changes
took place in local areas of a crystal, i.e. there arising
new defects or metastable conditions already existing
defects have changed. At enough intensive AE such
local changes simultaneously cover a significant part of
crystal volume, is irreversible changing its “integrated”
properties, in particular there is electrophysical
parameters degradation. Similarly, various extended
defects cardinally change electrophysical properties of
semiconductor crystals and structures [12, 13].
In [8, 9] dependence of spectral position of
electroluminescence (EL) strips from current density
heterojunction J of light-emitting GaAs0.15P0.85:N,Zn-
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008. V. 11, N32. P. 230-235.
© 2008, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
231
O/GaP heterostructures during the different consecutive
moments of time - before and after AE is established.
Researches in [9] specify presence of connection
between evolutions of EL spectrums specified hetero-
structures, degradation their current-volt characteristics
(CVC) and AE occurrence.
It specifies that additional sources of superfluous
noise of semiconductor devices, in particular light-
emitting heterostructures, can be various physical
mechanisms. For example – transformation, owing to
tensoresistive effect [14, 15] or acoustoelectric
transformations [1, 2], acoustic noise (AE signals) in a
superfluous current. The common for the set forth above
phenomena non-equilibrium processes, and also defects-
formation in complex structures based on the
semiconductors compounds, induced by a current more
possibly.
Considering similar to noise character of AE
signals, is obviously important and actual complex
research of acoustic emission, optical and electric
current fluctuation of light-emitting heterostructures, and
also – changes of their electroluminescence spectrum
and current-volt characteristics.
2. Experiment
As samples were used light-emitting epitaxial n+-n-p
structures based on the A3B5 compounds:
GaAs0.15P0.85:N,Zn-O/GaP, GaP:N/GaP and InGaN/GaN
structures. Research of time correlation dependences
was carrying out on apparatuses and by a technique
similar [6, 8, 9]. AE signals were registered by the
piezoelectric transducers and specialized acoustic-
emission device AF-15. For record of EL spectra it was
used monochromator, and the signal from a
photodetector was processed by a computer. Current-
volt characteristics of structures were measured
simultaneously with record of AE spectra and AE
registration. Through epitaxial structures with the area
(400-450)×(400-450) µm and the maximal direct current
density of recommended by the manufacturer Jn =
4 А/cm2 the density current Ji = (2-200) А/cm2 was
passed, which increased at a walk – in everyone (i+1)
increase Ji+1 = (2-1.2)·Ji. Time between changes of a
current was defined on AE termination (2-15 min after Ji
increase), or on AE absence within 5 min.
Prominent feature of observed acoustic emission, at
the set mode of current change, was occurrence of АЕ
signals through 3-30 s (or more) after sharp increase
(jump) of a current of heterojunction. Thus in some
cases burst AE it was registered (attenuated) within 5-
10 min as groups of impulses, the time interval between
which achieved sometimes 3-5 min. It specifies that AE
sources relatively inertial, and local microstrains in a
crystal till the failure moment developed at least during
3-30 s. During too time already achieved heterojunction
current of the investigated samples only in some cases
(at repeated loading) caused repeated failures of
microstrains that corresponds to performance of the
Kaiser law. Regular AE control, in particular, has
allowed to achieve direct current density of the given
structures up to 30-50 times above, declared by the
manufacturer.
The AE, electric and “optical” fluctuations (noises)
had been registered simultaneously under direct current
of heterojunction. Following correlation was always
observed: actually to each group of burst АE signals
there corresponds increase superfluous current noise
(Fig. 1a, c). To “optical” noise (short-term change of EL
intensity) always there correspond AE signals (Fig. 1b)
and superfluous current noise.
It is necessary to note, that at registration by means
of analog-to-digital converter group of АЕ signals are
registered with a delay 25-75 µs to quantum yield
fluctuations (Fig. 1b), and have more “difficult” form,
than at registration by a recorder (Fig. 1a). Time
quantum yield fluctuations in Fig. 1b look like an
integrating curve to АЕ signals (oscillations) and
actually correspond to concept “АЕ event” – to the
certain time interval of elastic waves radiation which
answers the act of operation of АЕ source. Also EL
degradation after intensive АE was observed.
Fig. 1. Correlation of acoustic emission signals (1), current
fluctuations (2) and a quantum yield fluctuations (3).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008. V. 11, N32. P. 230-235.
© 2008, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
232
As well as in [8, 9], АE in epitaxial light-emitting
GaAs0.15P0.85:N, Zn-O/GaP structures it is accompanied by
EL strips displacement (Fig. 2). These displacements for
small currents had character of fluctuations (1-5 min) at
constant J (Fig. 2a, b) or were reversible at reduction J [8].
1.6 1.8 2.0
E, ev
100
150
200
250
300
I,
ar
b.
un
its 1
2 3
4
2.0 2.2 2.4
E, eV
100
150
200
250
I,
ar
b.
un
its
1
2
34
1.8 2.0 2.1 2.3
E, eV
200
400
600
800
I,
ar
b.
un
its
2
3
4
5
1
Fig. 2. EL spectra displacement: a, b – temporary, c – irrever-
sible; a – red strip, b, c – green strip. Current density (A/cm2):
a) 1 – 6, 2 – 12 (without AE), 3 – 12 (with continuous AE), 4 –
28; b) 1 – 6, 2 – 12, 3 – 28 (with continuous AE), 4 – 28 (with-
out continuous AE); c) 1 – 60, 2 – 80 (before burst AE), 3 – 80
(after burst AE), 4 – 130 (before burst AE), 5 – 130 (after burst
AE).
2.5 5.0
0
50
100
GaAs0.15P0.85/GaP
InGaN/GaN
II
I
II
4
3
521
4
3
52
U, V
J,
A
/c
m
2
1
I
Fig. 3. CVC degradation GaAsP/GaP and InGaN/GaN
heterostuctures at acoustic emission.
For big J, after intensive АE and formations
infrared (I) EL strips, this process of displacement of EL
strips could end differently. In some cases (as well as in
[8]) was restoration of initial position red (R) and green
(G) strips of a EL spectrum of GaAs0.15P0.85:N, Zn-
O/GaP structures at reduction J up to the previous value.
In others – there was a degradation, displacement of a
green strip (Fig. 2c) with 2.2 up to 2.0 eV and
irreversible disappearance of a R-strip even at small Ji.
Structures degradation in which it was observed
AE, is shown and in their change of CVC. In Fig. 3
shown are typical CVC GaAsP/GaP and InGaN/GaN
structures for two cycles (I and II) changes J, arrows
specify a direction of change J. The site 1 (for each of
structures) corresponds to the first cycle increase of
current Ji. A site 2 – reduction Ji to zero and repeated
increase Ji. The site 1, site 2 and site 5 (repeated
reduction Ji) are qualitatively similar – actually is three
(consecutive in time) CVC of structure that degraded.
It is necessary to note, that fast (during 30-90 s)
degradation, at the first (sites 3) and the second (sites 4)
increase, it was accompanied intensive burst AE and
current fluctuation. АE last up to spontaneous reduction
Ji ~ 80 А/сm2 for GaAsP/GaP and Ji ~ 55 А/сm2 for
InGaN/GaN structures.
3. Discussion
Performed estimations of efficiency of transformation of
acoustic signals in electric, it is similar [1, 2], and also
the comparative analysis of the AE signals form and
current noise have shown (Fig. 1a, b), that in this case
AE signals cannot be an original cause of current noise
occurrence. Losses at such transformation are too great
(up to 105-106 times), and the current noise amplitude
was less amplitudes of electric AE signals no more, than
in 102 times, thus the signals form not corresponded
transformation according to tensoresistive mechanism.
As an interval between AE events it is usual in 102-
104 times exceeds time of АЕ event despite of significant
mismatches in the form of the registered quantum yield
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008. V. 11, N32. P. 230-235.
© 2008, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
233
fluctuations (“optical” noise), current noise and acoustic
emission, time coincidence (correlation) between them
more than obvious though these dependences cannot be
shown to functional as the named values, obviously,
depend on others, additional (for today – up to the end
unknown) factors which are defined by the common
nature of these phenomena. Big integrated intensity of
current noise is defined, possibly, also the contribution
of the mechanisms which have been not connected with
AE occurrence. As a whole, it agrees with the results
received earlier [3].
The reason of such phenomena conformity could
be both development of microcracks, and development
of linear defects (dislocations) in a crystal that are
accompanied by AE. Consequence of it would be current
jumps at crossing by defects of heterojunction area, and
also jumps and degradation of EL intensity. It is
necessary to notice, that AE at change of a condition of
separate dot defects, as is known, now it is not registered
at all because of obviously too small (probably radiated)
mechanical energy.
It is known, that degradation of structure
parameters, in particular current-volt characteristic,
capacitance-volt characteristic and EL intensity at
flowing of critical currents density is accompanied by
occurrence of a grid of dislocations in active area – p-n
junction [13, 16]. The lead studying of change of a light
output in GaP light-emitting diodes [10] by AE method
also explains dislocations distribution in active area of
the device. Due to [10], in light-emitting diodes in which
it was AE observed the greatest dislocations density has
been found out.
We had been made an estimation of probable
change of dislocations density ∆ρ, proportional,
according to dislocation AE theories [5, 18], total AE. At
the sizes of crystal V ~ 400×400×300 µm3, average total
АЕ for a cycle of measurements N ~ 103-104, average
length l ~ 1-20 µm dislocation loops (the minimal АЕ
source on sizes), and also the estimated ratio known on
[18]: 1 АЕ impulse correspond n ~ 103-104 dislocations
(dislocation loops), changed the condition simul-
taneously, ∆ρ can be defined from
VnlN ⋅⋅≈ρ∆ (1)
Then, on the average on a crystal volume, ∆ ρ ~
1010-1013 cm–2, and for active area (nanolayer in case of
InGaN/GaN) and adjoining areas up to 10-100 times
more, thus are known, that in the industrial light-
emitting InGaN/GaN structures which have been grown
up by a metal-organic chemical vapor deposition
(MOCVD) method, initial dislocation density on [19]
ρ ~ 107-108 cm–2, and for GaAs0.15P0.85/GaP on [13, 17]
ρ ~ 106-108 cm–2.
On the other hand, intensive development of
microcracks also should result not only to degradation,
but also to fast destruction of structures, however, as is
noted above, they kept working capacity at J ~ (20-
50) Jn.
Obviously, observed features in EL spectra also
demand additional explanations. It is known, that in
structures GaAs0.15P0.85:N,Zn-O/GaP radiating recombi-
nation in a red strip which influence in structures
GaP:N/GaP slightly is determined by Zn-O complexes.
Absence in the last I-strips in EL spectrum confirms
(stated in [8, 9]) the assumption, that EL growth in an I-
strip can be connected with process which leads to
disintegration of Zn-O complexes (and fast degradation
of structures) at high Ji and is accompanied by АЕ.
Thus, the observed complex of the phenomena
cannot be shown to one – to two typical mechanisms in
light-emitting structures, therefore us the following
sequence of mechanisms which lead, in particular, to AE
occurrence is offered.
At current flowing through p-n structure in it
temporary are formed areas of a temperature gradient,
and there is a redistribution of electric field gradients. In
turn, local areas of a temperature gradient which were
formed through a complex of the reasons – geometry of
contacts, the current crowding phenomenon [22],
conductivity heterogeneity of structure and others, cause
formation of temporary local areas of thermomechanical
strains (ТМS).
The relaxation (failure) superfluous ТМS is
accompanied burst (“high-energy”) acoustic emission –
radiation of pulse acoustic waves (creation of attenuating
local mechanical strain). It leads to current noise due to
fast local changes (in particular owing to temporary
deformations of energy zones) resistance, electronic and
hole a current component that leads to fluctuations of
injection of carriers in a quantum well whit radiation
recombination and, in turn, create EL intensity oscilla-
tion. The termination burst АЕ means transition of a
defect system in other, more stable condition.
Dislocations, others linear and extended defects
considerably – up to two or three orders lower strength
of semiconductors crystals [21]. Therefore, action ТМS
which have achieved critical value in the certain local
area of structure, and also duplication and change of a
condition (in particular – movement) this defects at
which own elastic field [21] is summarized with local
ТМS, are initiators of occurrence (generation and
movement) new defects of different dimension or
change of a energy condition existing defects. As these
defects are the centers of carriers dissipation of and them
tunneling [13], additional local growth of temperature
and acceleration of degradation of electrophysical
characteristics is probable.
Change dislocation subsystems of a crystal at
enough high density of dislocations can occur under
powerful enough pulse influence (burst АЕ) under
several scripts – first, continuous growth of dislocations
density owing to their duplication which is less probable
because of mechanical (brake) fields of already existing
dislocations [21], and, secondly, redistribution in volume
of existing dislocations (their movement) [18]. Possibly,
registered by us continuous “low-energy” AE which
traditionally connects with dislocation mechanisms of
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008. V. 11, N32. P. 230-235.
© 2008, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
234
AE [10, 18], can be explained by a following sequence
of processes: burst (explosive) АЕ, fast local
redistribution of mechanical strains, fast local spatial
redistribution (shift) of dislocations, relaxation processes
connected with the subsequent movement of dislocations
and pairs of their loops in fields of elastic strain
(continuous АЕ).
It is obvious, that thus nevertheless there is an
accumulation of local mechanical strains and duplication
of defects, in particular dislocations, especially in the
area of p-n junction [20], in particular, because of its
significant own electric field and due to the depletion
which has the high resistance. It correspond researches
[16], and allows explaining available degradation
processes (CVC degradation and EL intensity).
Received by formula (1) “formed at АE” the
additional dislocation density ∆ρ ~ 1010-1013 сm–2
actually only displays quantity of dislocation loops pairs
(or dislocation), which have participated (first of all
owing to their movement near to a source burst AE) in
formation of signals of continuous АE, it is probable –
repeatedly.
Actually local areas of microplasticity of structure
at critical current density in which there is a relaxation of
the superfluous mechanical and created thermo-
mechanical strains, are acoustic emission sources in
complex semiconductor structures which operation
corresponds to their change luminescent that of electric
characteristics. It explains and noted irreversible shift of
G-strip of EL connected, apparently, with irreversible
accumulation of residual mechanical strains
(accumulation of plastic deformation) which lead to
deformations of local energy zones, to change of
bandgap width and, possibly, to change of distribution of
probability of radiating recombination.
4. Conclusion
From the lead complex researches of light-emitting
GaAsP/GaP, GaP/GaP and InGaN/GaN structures at
current density which exceed a threshold of burst АЕ
occurrence, follows, that simultaneously take place: АЕ
sources operation, reversible and irreversible change of
EL spectra, CVC degradation and fluctuations of
quantum yield and current. It specifies the common
mechanism of their origin – processes of occurrence and
changes of energy condition and structure extended, in
particular linear, and dot defects, in particular – the
centers of radiating and nonradiating recombination.
It is shown, that changes of EL spectra
heterostructures which traditionally connect with change
of a condition of dot defects, can it is determined not
only a material and heterojunction structure and relaxed
condition of dot defects (impurity), but also momentary,
in particular nonequilibrium, a condition of crystal
defect structure as a whole and momentary operating
non-uniform thermomechanical strains which at a
relaxation change a structure of energy zones and levels
in separate local areas of a crystal.
The high density direct current of light-emitting
heterostructure is the initiating factor for changes in
distribution of their internal local mechanical strains and
in defect structure heterojunction and substrates which
determine АЕ occurrence speed and value of
degradation of basic parameters, in particular – CVC,
spectrum and EL intensity.
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