TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment
The investigations of TiB₂/GaAs and Au-TiB₂/GaAs structural characteristics in dependence on technological regimes of sputtering and TiB2-film thicknesses as well as structural relaxation processes at short-term thermal annealing were carried out. TiB₂-film on Czochralski-grown (001) GaAs substrates...
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| Datum: | 1999 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119063 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment / T.G. Kryshtab, P.M. Lytvyn, M.O. Mazin, O.S. Lytvyn, I.V. Prokopenko, V.N. Ivanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 73-77. — Бібліогр.: 8 назв. — англ. |