Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix
The results of experimental researches of photoluminescence (PL) spectra in Si nanocluster structures obtained by implantation of silicon ions to SiO₂-Si structures with high-temperature (1100 °C) and following low-temperature annealings in various regimes are given. We have found that additional...
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| Datum: | 2008 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119068 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix / I. Khatsevich, V. Melnik, V. Popov, B. Romanyuk, V. Fedulov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 352-355. — Бібліогр.: 17 назв. — англ. |