On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals
Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = 1 with growing hydrogen concentration x (here x is the amount of hydrogen atoms...
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| Datum: | 2004 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119208 |
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| Zitieren: | On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals / Yu.I. Zhirko, I.P. Zharkov, Z.D. Kovalyuk, M.M. Pyrlja, V.B. Boledzyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 404-410. — Бібліогр.: 22 назв. — англ. |
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irk-123456789-1192082017-06-06T03:03:13Z On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals Zhirko, Yu.I. Zharkov, I.P. Kovalyuk, Z.D. Pyrlja, M.M. Boledzyuk, V.B. Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = 1 with growing hydrogen concentration x (here x is the amount of hydrogen atoms per a formula unit of a crystal matrix) stems from the increasing dielectric permittivity of the crystal ε₀ due to availability of hydrogen in the van der Waals gap. Growth of ε₀(x) results in decrease of the exciton binding energy but, at larger x concentrations (when the anisotropy parameter ε*(х) grows), 2D localization of exciton motion in the crystal layer plane takes place, which causes reduction and then, at x > 1, stabilization of sizes both for the exciton and quantum well. 2004 Article On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals / Yu.I. Zhirko, I.P. Zharkov, Z.D. Kovalyuk, M.M. Pyrlja, V.B. Boledzyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 404-410. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS: 71.35.Cc, 78.40.Fy http://dspace.nbuv.gov.ua/handle/123456789/119208 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = 1 with growing hydrogen concentration x (here x is the amount of hydrogen atoms per a formula unit of a crystal matrix) stems from the increasing dielectric permittivity of the crystal ε₀ due to availability of hydrogen in the van der Waals gap. Growth of ε₀(x) results in decrease of the exciton binding energy but, at larger x concentrations (when the anisotropy parameter ε*(х) grows), 2D localization of exciton motion in the crystal layer plane takes place, which causes reduction and then, at x > 1, stabilization of sizes both for the exciton and quantum well. |
| format |
Article |
| author |
Zhirko, Yu.I. Zharkov, I.P. Kovalyuk, Z.D. Pyrlja, M.M. Boledzyuk, V.B. |
| spellingShingle |
Zhirko, Yu.I. Zharkov, I.P. Kovalyuk, Z.D. Pyrlja, M.M. Boledzyuk, V.B. On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Zhirko, Yu.I. Zharkov, I.P. Kovalyuk, Z.D. Pyrlja, M.M. Boledzyuk, V.B. |
| author_sort |
Zhirko, Yu.I. |
| title |
On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals |
| title_short |
On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals |
| title_full |
On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals |
| title_fullStr |
On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals |
| title_full_unstemmed |
On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals |
| title_sort |
on wannier exciton 2d localization in hydrogen intercalated inse and gase layered semiconductor crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119208 |
| citation_txt |
On Wannier exciton 2D localization in hydrogen intercalated InSe and GaSe layered semiconductor crystals / Yu.I. Zhirko, I.P. Zharkov, Z.D. Kovalyuk, M.M. Pyrlja, V.B. Boledzyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 404-410. — Бібліогр.: 22 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2025-07-08T15:26:32Z |
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2025-07-08T15:26:32Z |
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