Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals
This paper presents theoretical and experimental investigations of narrow-gap semiconductors HgMnTe and HgCdMnTe. It has been shown that the comparison of temperature dependencies of the conductivity and Hall coefficient in the mixed conductivity region makes it possible to determine the content of...
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| Date: | 2004 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119211 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals / S.E. Ostapov, I.M. Rarenko, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 339-342. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | This paper presents theoretical and experimental investigations of narrow-gap semiconductors HgMnTe and HgCdMnTe. It has been shown that the comparison of temperature dependencies of the conductivity and Hall coefficient in the mixed conductivity region makes it possible to determine the content of cadmium and manganese, as well as the concentration of doping acceptor impurity. |
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