Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy
Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and it was shown that sizes of experimentally obtained QDs are in good accordance...
Gespeichert in:
| Datum: | 2004 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119216 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy / I.E. Maronchuk, A.M. D’yachenko, A.I. Minailov, V.V. Kurak, I.V. Chorny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 363-367. — Бібліогр.: 7 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119216 |
|---|---|
| record_format |
dspace |
| fulltext |
|
| spelling |
irk-123456789-1192162017-06-06T03:02:55Z Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy Maronchuk, I.E. D’yachenko, A.M. Minailov, A.I. Kurak, V.V. Chorny, I.V. Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and it was shown that sizes of experimentally obtained QDs are in good accordance with those theoretically calculated taking into account the Rehbinder effect and the process of nuclei increase. The STM-image and the photoluminescence spectra of the structures with InAs QD grown on GaAs substrate and also InSb quantum dots grown on GaSb substrate are represented. 2004 Article Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy / I.E. Maronchuk, A.M. D’yachenko, A.I. Minailov, V.V. Kurak, I.V. Chorny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 363-367. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 73.40.Lq http://dspace.nbuv.gov.ua/handle/123456789/119216 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and it was shown that sizes of experimentally obtained QDs are in good accordance with those theoretically calculated taking into account the Rehbinder effect and the process of nuclei increase. The STM-image and the photoluminescence spectra of the structures with InAs QD grown on GaAs substrate and also InSb quantum dots grown on GaSb substrate are represented. |
| format |
Article |
| author |
Maronchuk, I.E. D’yachenko, A.M. Minailov, A.I. Kurak, V.V. Chorny, I.V. |
| spellingShingle |
Maronchuk, I.E. D’yachenko, A.M. Minailov, A.I. Kurak, V.V. Chorny, I.V. Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Maronchuk, I.E. D’yachenko, A.M. Minailov, A.I. Kurak, V.V. Chorny, I.V. |
| author_sort |
Maronchuk, I.E. |
| title |
Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy |
| title_short |
Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy |
| title_full |
Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy |
| title_fullStr |
Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy |
| title_full_unstemmed |
Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy |
| title_sort |
obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119216 |
| citation_txt |
Obtaining heterostructures with quantium dots for sensors by using liquid phase epitaxy / I.E. Maronchuk, A.M. D’yachenko, A.I. Minailov, V.V. Kurak, I.V. Chorny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 363-367. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT maronchukie obtainingheterostructureswithquantiumdotsforsensorsbyusingliquidphaseepitaxy AT dyachenkoam obtainingheterostructureswithquantiumdotsforsensorsbyusingliquidphaseepitaxy AT minailovai obtainingheterostructureswithquantiumdotsforsensorsbyusingliquidphaseepitaxy AT kurakvv obtainingheterostructureswithquantiumdotsforsensorsbyusingliquidphaseepitaxy AT chornyiv obtainingheterostructureswithquantiumdotsforsensorsbyusingliquidphaseepitaxy |
| first_indexed |
2025-07-08T15:27:17Z |
| last_indexed |
2025-07-08T15:27:17Z |
| _version_ |
1837093028440834048 |