Photoelectrical characteristics of two-dimensional macroporous silicon structures
Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode optical regime, essential domination of the absorption over the light reflection...
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| Datum: | 2004 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119227 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photoelectrical characteristics of two-dimensional macroporous silicon structures / L.A. Karachevtseva, V.F. Onischenko, M.I. Karas’, O.I. Dandur’yants, F.F. Sizov, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 425-429. — Бібліогр.: 8 назв. — англ. |
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