Recording the high efficient diffraction gratings by using He-Cd laser
High efficient holographic diffraction gratings with spatial frequencies from 600 to 3600 mm⁻¹ have been recorded using As₄₀S₆₀–хSeх (х = 0, 10, 20) photoresist layers and He-Cd laser operating at the wavelength λ = 440 nm. The investigation of the grating relief made by atomic force microscopy reve...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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irk-123456789-1192312017-06-06T03:03:37Z Recording the high efficient diffraction gratings by using He-Cd laser Kostyukevych, S.A. Morozovska, A.N. Minko, V.I. Shepeliavyi, P.E. Kudryavtsev, A.A. Rubish, V.M. Rubish, V.V. Tverdokhleb, I.V. Kostiukevych, A.S. Dyrda, S.V. High efficient holographic diffraction gratings with spatial frequencies from 600 to 3600 mm⁻¹ have been recorded using As₄₀S₆₀–хSeх (х = 0, 10, 20) photoresist layers and He-Cd laser operating at the wavelength λ = 440 nm. The investigation of the grating relief made by atomic force microscopy revealed that As₄₀S₆₀–хSeх resists allows one to record grating originals with profiles of various heights depending on the resist chemical composition, its etching and exposure times. We obtained typical spectral and angular dependences of the first order diffraction efficiency for the grating with the high modulation depth and groove profile close to the sinusoidal one. Comparing the recorded gratings with different spatial frequencies, exposure and etching times, we determined optimal recording conditions (exposure and etching times) in order to obtain gratings with the high diffraction efficiency. 2004 Article Recording the high efficient diffraction gratings by using He-Cd laser / S.A. Kostyukevych, A.N. Morozovska, V.I. Minko, P.E. Shepeliavyi, A.A. Kudryavtsev, V.M. Rubish, V.V. Rubish, I.V. Tverdokhleb, A.S. Kostiukevych, S.V. Dyrda // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 446-451. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS:42.40.Eq, 42.70.Ln http://dspace.nbuv.gov.ua/handle/123456789/119231 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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High efficient holographic diffraction gratings with spatial frequencies from 600 to 3600 mm⁻¹ have been recorded using As₄₀S₆₀–хSeх (х = 0, 10, 20) photoresist layers and He-Cd laser operating at the wavelength λ = 440 nm. The investigation of the grating relief made by atomic force microscopy revealed that As₄₀S₆₀–хSeх resists allows one to record grating originals with profiles of various heights depending on the resist chemical composition, its etching and exposure times. We obtained typical spectral and angular dependences of the first order diffraction efficiency for the grating with the high modulation depth and groove profile close to the sinusoidal one. Comparing the recorded gratings with different spatial frequencies, exposure and etching times, we determined optimal recording conditions (exposure and etching times) in order to obtain gratings with the high diffraction efficiency. |
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Article |
| author |
Kostyukevych, S.A. Morozovska, A.N. Minko, V.I. Shepeliavyi, P.E. Kudryavtsev, A.A. Rubish, V.M. Rubish, V.V. Tverdokhleb, I.V. Kostiukevych, A.S. Dyrda, S.V. |
| spellingShingle |
Kostyukevych, S.A. Morozovska, A.N. Minko, V.I. Shepeliavyi, P.E. Kudryavtsev, A.A. Rubish, V.M. Rubish, V.V. Tverdokhleb, I.V. Kostiukevych, A.S. Dyrda, S.V. Recording the high efficient diffraction gratings by using He-Cd laser Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kostyukevych, S.A. Morozovska, A.N. Minko, V.I. Shepeliavyi, P.E. Kudryavtsev, A.A. Rubish, V.M. Rubish, V.V. Tverdokhleb, I.V. Kostiukevych, A.S. Dyrda, S.V. |
| author_sort |
Kostyukevych, S.A. |
| title |
Recording the high efficient diffraction gratings by using He-Cd laser |
| title_short |
Recording the high efficient diffraction gratings by using He-Cd laser |
| title_full |
Recording the high efficient diffraction gratings by using He-Cd laser |
| title_fullStr |
Recording the high efficient diffraction gratings by using He-Cd laser |
| title_full_unstemmed |
Recording the high efficient diffraction gratings by using He-Cd laser |
| title_sort |
recording the high efficient diffraction gratings by using he-cd laser |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
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http://dspace.nbuv.gov.ua/handle/123456789/119231 |
| citation_txt |
Recording the high efficient diffraction gratings by using He-Cd laser / S.A. Kostyukevych, A.N. Morozovska, V.I. Minko, P.E. Shepeliavyi, A.A. Kudryavtsev, V.M. Rubish, V.V. Rubish, I.V. Tverdokhleb, A.S. Kostiukevych, S.V. Dyrda // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 446-451. — Бібліогр.: 14 назв. — англ. |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2004. V. 7, N 4. P. 446-451.
© 2004, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
446
PACS:42.40.Eq, 42.70.Ln
Recording the high efficient diffraction gratings by using He-Cd laser
S.A. Kostyukevych1*, A.N. Morozovska1**, V.I. Minko1, P.E. Shepeliavyi1, A.A. Kudryavtsev1, V.M. Rubish2,
V.V. Rubish2, I.V. Tverdokhleb2, A.S. Kostiukevych1,3, S.V. Dyrda4
1 V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kiev, Ukraine, *sekret@spie.org.ua, **morozo@i.com.ua
2 Uzhgorod National University, 54, Voloshina str., 88000 Uzhgorod, Ukraine
3 National Agricultural University, 03028 Kiev, Ukraine
4 Taras Shevchenko Kiev National University, 2, prospect Glushkova, 03127 Kiev, Ukraine
Abstract. High efficient holographic diffraction gratings with spatial frequencies from
600 to 3600 mm–1 have been recorded using As40S60–хSeх (х = 0, 10, 20) photoresist
layers and He-Cd laser operating at the wavelength λ = 440 nm. The investigation of the
grating relief made by atomic force microscopy revealed that As40S60–xSex resists allows
one to record grating originals with profiles of various heights depending on the resist
chemical composition, its etching and exposure times. We obtained typical spectral and
angular dependences of the first order diffraction efficiency for the grating with the high
modulation depth and groove profile close to the sinusoidal one. Comparing the
recorded gratings with different spatial frequencies, exposure and etching times, we
determined optimal recording conditions (exposure and etching times) in order to obtain
gratings with the high diffraction efficiency.
Keywords: inorganic photoresist, selective etching, holographic diffraction gratings.
Manuscript received 06.10.04; accepted for publication 16.12.04.
1. Introduction
The prospective way for manufacturing holographic
diffraction gratings (HDG) with the high diffraction
efficiency [1] is using the chalcogenide resist layers [2].
The simplicity of sputtering, stability of sensitometric
characteristics, high quality of selective enchants allows
one to simplify the technology to produce high quality
HDGs. This has been proved in papers [3-9], where the
formation of HDG using As-S-Se layers were reported.
The resist layers As40S60–xSex (х = 0, 10, 20) possess
the most stable properties and best exploitation
characteristics. The high efficient HDGs with spatial
frequencies 600 up to 3600 mm–1 recorded on these
layers were reported in [10-11]. The HDG relief
investigation by atomic force microscopy (AFM)
revealed that resists As40S60–xSex allow to record HDG
originals with various height profiles depending on the
composition x and exposure time (Fig. 1). Different
kinds of holographic protective elements have been
manufactured using laser, and electron-beam lithography
as well as their properties have been studied. High
quality nickel matrices and holographic protective
elements (that include optical, digital holograms and
submicron text) for documents and goods protection in
Ukraine were obtained. Thus, resists with the
composition As40S60–xSex are undoubtedly of practical
interest as recording media for optical elements [12, 13].
However recording the high efficient HDG by using He-
Cd laser was not studied earlier because of the relatively
small coherence length of such lasers. In particular
recording of the HDG on wavelengths of He-Ne та Ar
lasers was reported in papers [3-6], but the later takes
place under the significantly lower resist photosensitivity
in comparison with recording by using He-Cd laser, and
thus demands higher operating laser powers. Having the
modern types of He-Cd lasers, it is possible to record
high efficient HDGs on As40S60–xSex layers at essentially
lower energy consumption, than doing the same by using
He-Ne or Ar lasers.
Fig. 1. Dependence of the groove depth on the exposure for the
HDG with the spatial frequency 1200 mm–1 (HDG recorded at
nm441=λ , negative etching, etching time corresponds to an
optimum relief).
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2004. V. 7, N 4. P. 446-451.
© 2004, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
447
2. Experimental description
Holographic recording a diffraction grating is based on
registration of the interference pattern created by two
coherent beams inside the photosensitive medium. He-
Cd laser was operating at λ = 441 nm. The
photosensitive system was made by deposition of
chalcogenide As40S60–xSex (х = 0, 10, 20) layers with the
thickness 1μm on polished glass substrates by thermal
evaporation in vacuum. After exposure, the layer
treatment was made by organic selective enchant based
on amines [9], in which the selective dissolution of non-
exposed regions of As2S3 layers (negative etching) took
place and symmetrical relief was obtained. The HDG
height and profile are determined not only by laser beam
intensity distribution inside the layer under exposure, but
also by the etching time. Then the thin layer of high
efficient reflective coating was deposited (e.g. Al layer).
The surface topography and groove shape have been
investigated by AFM NanoScope IIIa (Scannіng Probe
Mіcroscope made by Dіgіtal Іnstruments).
3. HDG on resist layers of As2S3
AFM investigation revealed that the characteristic
feature of HDG with the spatial frequency 2200 –
3400 mm–1 recorded in resist As2S3 layers is their
relatively high quality of groove profile (see Fig. 2). In
particular, we obtained HDG with almost sinusoidal
groove profile and high modulation depth
% 4020 ≤≤ m (see Fig. 3) depending on the post-
exposure treatment (namely, etching time) and chemical
composition, which provided their high diffraction
efficiency 60 to 90 %. We obtained that at the defined
etchant selectivity and exposure time value the groove
depth h mainly depends on the etching time (see Fig. 4).
Fig. 2. Surface of the holographic diffraction grating with the
spatial frequency 3600 mm–1 etched for 90 s.
Fig. 3а. Relief of the HDG with the spatial frequency
2200 mm–1 for various etching times t (period d = 454.5 nm,
groove depth h, modulation depth m = h / d).
Fig. 3b. Relief of the HDG with the spatial frequency
3400 mm–1 for various etching times t (period d = 294 nm,
groove depth h, modulation depth m = h / d).
Fig. 4. Dependence of the groove depth for HDG with the
spatial frequency 2200 and 3400 mm–1 on the time of negative
etching for exposure 2mJ/cm90=H (Hereinafter HDG
recorded at nm 441=λ , As2S3).
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2004. V. 7, N 4. P. 446-451.
© 2004, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
448
Let us underline, that the harmonic (sinusoidal) shape of
HDG profile permits us to provide serial replication,
exact original HDG copying and obtain HDG copies
with the identical spectral and angular diffraction
efficiency η. Both the shape and height of the groove
profile determine spectral and angular diffraction
efficiency dependences.
4. Spectral and angular diffraction efficiency
dependences
The spectral first order diffraction efficiency η(λ) was
measured using the conventional Littrow scheme [1] in
the wavelength region ( ) nm 800400 −=λ .
Figs 5-6 demonstrate spectral and angular
dependences of the diffraction efficiency η of HDG
recorded in As2S3 layers at various etching times t
(measurements were carried out in transverse (s) and
parallel (p) polarizations of incident light, the exposure
value was 2mJ/cm90=H ). At small etching times the
height of grooves is small enough, and thus the
modulation depth m is also small. Therefore, the grating
etched for about 30 s or less demonstrates low values of
the diffraction efficiency in the most part of the studied
spectral region. At long etching times (~ 120 s) groove
profile is over-etched and so transforms in such a way
that again becomes shallower. The optimal situation
corresponds to the intermediate etching times between
60 and 90 s. This opens the possibility to obtain HDG
with the high diffraction efficiency at etching times 60,
90 s.
Fig. 5а. Spectral dependences of the diffraction efficiency η(λ)
for HDG with the spatial frequency 2200 mm–1 for
perpendicular s-polarization of light and various etching times t
(in seconds).
Fig. 5b. Angular dependences of the diffraction efficiency
η(ϕ) for HDG with the spatial frequency 2200 mm–1 for s-
polarization and various etching times t (in seconds).
Fig. 5c. Spectral dependences of the diffraction efficiency η(λ)
for the HDG with the spatial frequency 2200 mm–1, for parallel
p-polarization of light and various etching times t (in seconds).
Fig. 5d. Angular dependences of the diffraction efficiency
η(ϕ) for the HDG with the period 2200 mm–1, p-polarization
and various etching times t (in seconds).
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2004. V. 7, N 4. P. 446-451.
© 2004, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
449
Fig. 6а. Spectral dependences of the diffraction efficiency η(λ)
for HDG with the spatial frequency 3400 mm–1, s-polarization
of light and various etching times t (in seconds).
Fig. 6b. Spectral dependences of the diffraction efficiency η(λ)
for HDG with the spatial frequency 3400 mm–1, p-polarization
of light and various etching times t (in seconds).
The spectral (a,b) and angular (c,d) dependences of
the HDG diffraction efficiency recorded at different
exposures ( ) 2mJ/cm 17050 −=H and optimal etching
times ( ) s 9060 −=t are presented in Figs 7, 8. At small
exposures 2mJ/cm40<H , the modulation depth is
relatively small. This effect causes low values of the
diffraction efficiency of HDG recorded at
2mJ/cm40<H in the most part of the studied spectral
region. Under further increasing the exposure, the
diffraction efficiency also increases. The highest
diffraction efficiency values have been obtained at
intermediate exposure values ( ) 2mJ/cm10070 −=H
(see Fig. 7). Concerning the changes in the HDG profile,
the general rule is valid: under increasing exposure the
saturation of tops, narrowing and deepening of grooves
are observed. At high exposures
( ) 2mJ/cm200110 −=H , the sinusoidal groove profile
is subjected to strong changes, namely, it transforms into
the almost cycloidal one with wide tops and narrow
grooves. The angular dependences η(ϕ) of HDG
recorded at further increasing exposure
( ) 2mJ/cm117110 −=H are depicted in Fig. 8. The
main differences between the dependences shown in
Figs 8 and those presented in Figs 7c,d can be explained
by the deviation of the HDG profile from the sinusoidal
one with increasing exposure.
The spectral dependence of the HDG diffraction
efficiency η(λ) for the spatial frequency 2200 mm–1 on
the etching time at several wavelengths (λ = 400 –
760 nm) measured at s-polarization is presented in
Fig. 9. We choose the optimal exposure value
2mJ/cm90≈H . Diffraction efficiency increases with λ
increasing up to nm 720≈λ in all the region of etching
times from 30 to 120 s. It is clear from the figure that at
λ = (400 – 700) nm HDGs demonstrate the maximum
diffraction efficiency values at etching times close to one
minute. At first glance, it is reasonable to increase the
etching time up to two minutes only for using HDG in
the infrared spectral region λ > 700 nm. But let us to
remind once more that at high etching times the original
groove profile quality is reduced (the modulation depth
is reduced, inharmonic changes appeared), and thus
problems with HDG replication could arise.
Fig. 7а. Spectral dependences of the diffraction efficiency η(λ)
for HDG with the spatial frequency 2200 mm–1, s-polarization
of light and various exposures )mJ/cmin( 2H .
Fig. 7b. Spectral dependences of the diffraction efficiency η(λ)
for HDG with the spatial frequency 2200 mm–1, p-polarization
of light and various exposures )mJ/cmin( 2H .
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2004. V. 7, N 4. P. 446-451.
© 2004, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
450
Fig. 7c Angular dependences of the diffraction efficiency η(ϕ)
for the HDG with the spatial frequency 2200 mm–1, s-
polarization and various exposures )mJ/cmin( 2H .
Fig. 7d Angular dependences of the diffraction efficiency η(ϕ)
for the HDG with the spatial frequency 2200 mm–1, p-
polarization and various exposures )mJ/cmin( 2H .
Fig. 8а Angular dependences of the diffraction efficiency η(ϕ)
for the HDG with the spatial frequency 2200 mm–1, p-
polarization and increased exposures 2mJ/cm110>H .
Fig. 8b Angular dependences of the diffraction efficiency η(ϕ)
for the HDG with the spatial frequency 2200 mm–1, s-
polarization and increased exposures 2mJ/cm110>H .
Fig. 9. Dependences of the diffraction efficiency η for the
HDGs with the spatial frequency 2200 mm–1 on the etching
time for various wavelength of incident light (λ = 400, 480,
620, 700, 760 nm); s-polarization, exposure 2mJ/cm90~H .
5. Discussion
We obtained typical spectral and angular dependences of
the first order diffraction efficiency η for the grating
with the high modulation depth %4020 ≤≤ m and
groove profile close to the sinusoidal one [14].
Spectral dependences values for s-polarization
reveal some oscillation behavior at ( ) nm 480420 −=λ
and maximum at ( ) nm 750700 −=λ (see. Figs 5а, 7а).
Such behavior of η(λ) for HDG with the period
nm 5.454=d (spatial frequency 2200 mm–1) for s-
polarization correlates with theoretical calculations at
( )1.17.0~/ −λ d (minimum) and ( )80.155.1~/ −λ d
(maximum) (compare with the Figs 9 – 13, 14 from [1]).
Angular dependences of diffraction efficiency η(ϕ) for
s-polarization have a conventional view of wide tops at
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2004. V. 7, N 4. P. 446-451.
© 2004, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
451
( )°−=ϕ 8535 with small oscillations (see Figs 5b, 7c).
The spectral efficiency values of HDG with
nm 294=d (3400 mm–1) drastically decreases at
nm 550≥λ (see. Fig. 6а for s-polarization of incident
light) this corresponds to the theoretical calculations in
the case 8.1/ >λ d .
The spectral diffraction efficiency η(λ) of HDG
with the period nm 5.454=d (see Figs 5c, 7b) for р-
polarization of incident light almost monotonically
increases under wavelength decreasing, then saturates or
has smooth maximum at ( ) nm 420400 −≈λ , which
correlates with theoretical calculations of such behavior
at ( )9.07.0~/ −λ d (compare with Figs 9 – 13, 14 from
[1]). Angular dependences of the diffraction efficiency
η(ϕ) for р-polarization have a typical view of the smooth
maximum near °≈ϕ 50 (see Figs 5d, 7d). The efficiency
η(λ) of HDG with the period nm 294=d (see Fig. 6b)
monotonically increases with the decreasing of
wavelength, which completely corresponds to the
theoretical calculations [14] at 3.1/ ≥λ d .
Using Fig. 9, we compared recorded HDG with the
spatial frequency 2200 mm–1 at different exposures and
etching times and determined the optimal parameters for
recording HDGs with the high diffraction efficiency
η ≈ (70 – 90) % within the wavelength region
( ) nm 700500~ −λ , namely: etching time s 60~t ,
exposure value ( ) 2mJ/cm7090 −=H .
6. Conclusion
Comparing the recorded in the inorganic resist layers
As40S60–xSex (х = 0, 10, 20) HDGs with different spatial
frequencies, exposures and etching times, we determined
optimal recording conditions (exposure and etching
times). Under these conditions it is possible to record
gratings with the high diffraction efficiency by using He-
Cd laser.
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