Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers
The present paper is concerned with the peculiarities of the mechanism of irreversible photostructural transformations in As-S-Se layers. The starting point of the irreversible photostructural transformations is the state which is determined by the conditions of the fabrication of the As-S-Se layers...
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| Datum: | 2001 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119254 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers / A.V. Stronski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 111-117. — Бібліогр.: 37 назв. — англ. |