Silver-related local centres in cadmium sulfide
Silver-related defects and their diffusion in CdS crystals were investigated. The impurity was introduced in the crystal and extracted from it under electric field Ed = 10² V/cm at T = 300-450°C both parallel and perpendicular to the c-axis. The only local centre that was proved to appear after Ag i...
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| Datum: | 2001 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119266 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Silver-related local centres in cadmium sulfide / L.V. Borkovskaya, B.M. Bulakh, L.Yu. Khomenkova, I.V. Markevich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 163-167. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Silver-related defects and their diffusion in CdS crystals were investigated. The impurity was introduced in the crystal and extracted from it under electric field Ed = 10² V/cm at T = 300-450°C both parallel and perpendicular to the c-axis. The only local centre that was proved to appear after Ag introduction and to disappear after its extraction was deep acceptor responsible for emission band λm = 610 nm. Photo-enhanced defect reaction resulting in photosensitivity degradation was shown to occur after Ag incorporation. It was found that diffusion anisotropy took place, Ag diffusion being some times faster parallel to the c-axis. |
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