Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration
High precision measurements of intrinsic electron concentration ni in Hg₁₋xCdxTe crystals were made in broad ranges of compositions (x = 0…0.31) and temperatures (T = 77…420 К). It was found that effective mass of the integral heavy hole state density essentially depends on temperature. It can be ex...
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| Date: | 2001 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119320 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration / V.V. Bogoboyashchyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 273-277. — Бібліогр.: 17 назв. — англ. |