Influence of g-irradiation on photoluminescence spectra of CdTe:Cl
Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For larger doses of g-irradiation both a decrease of the total luminescence inten...
Збережено в:
| Дата: | 2002 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119561 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of g-irradiation on photoluminescence spectra of CdTe:Cl / N.D. Vakhnyak, S.G. Krylyuk, Yu.V. Kryuchenko, I.M. Kupchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 25-30. — Бібліогр.: 31 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For larger doses of g-irradiation both a decrease of the total luminescence intensity and the intensity redistribution between the lines of excitons bound to different acceptors occur. For the donor-acceptor recombination with A-centers participation, an increase of the Huang-Rhys factor S is found with D increase. This fact can be explained by decrease of the A-centers concentration. The experimentally determined S values are compared with a calculated S(R) dependence for different distances R between donors and acceptors. |
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