Optical characterization of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures
Pseudomorphic strained-layer AlxGa₁₋xAs/InyGa₁₋yAs/GaAs heterostructures have been studied by means of photoluminescence and Raman scattering. It is established the correlation between the photoluminescence line shape changes and the Raman spectra modification when the quantum well width is below th...
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| Datum: | 1999 |
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| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119877 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Optical characterization of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures / Z.Ya. Zhuchenko, G.G. Tarasov, S.R. Lavorik, Yu.I. Mazur, M.Ya. Valakh, H. Kissel, W.T. Masselink, U. Mueller, C. Walther // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 103-108. — Бібліогр.: 24 назв. — англ. |