Review of a monographs
In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device...
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| Datum: | 1999 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/119878 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Review of a monographs / K.D. Glinchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 111. назв. — англ. |
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© 1999, Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, N 3.
Interactions Between Phases and
Degradation Mechanisms in
Metal-InP and Metal-GaAs
Structures
by E.F. Venger, R.V. Konakova, G.S. Korotchenkov,
V.V. Milenin, E.V. Russu and I.V. Prokopenko
(PC KTNK Publishers, Kiev, 1999, 234 p.)
In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as
experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mecha-
nisms in indium phosphide and gallium arsenide Schottky barrier device structures. For barrier contacts with a transition
layer the aging mechanisms and role of mass transport in them are discussed. The physico-chemical peculiarities of the
metal−InP (GaAs) interface formation, as well as feasibility of prediction of interactions between phases, are considered.
Particular emphasis is placed by the authors on (i) the analysis of predominant factors in the interactions between
phases in metal−III-V compound contacts with one- and two-component metallizations and (ii) the effect of
order←→disorder-type structural phase transitions on the properties of interfaces in such contacts.
In the reviewer’s opinion, the most interesting chapters are those based on the authors’ investigations aimed at reveal-
ing the nature of physico-chemical processes at the metal−InP (GaAs) interfaces and the effect of these processes on the
electrophysical characteristics of the Schottky barrier diode structures.
Of considerable utility for the researchers who deal with metal−semiconductor heterostructures are the chapters of the
monograph where the authors discuss formation of macroinclusions in the GaAs matrix and their evolution under different
external actions (heating, stresses, electric fields), as well as potentialities to exert control over the interface properties
using radiation-technology procedures.
The authors have managed to find a unified standpoint for a detailed consideration of various processes at the metal−
InP (GaAs) interfaces and their role in both current flow mechanisms and degradation in the corresponding device struc-
tures. It is my firm belief that the reviewed monograph will attract attention of numerous researchers - experts in materials
science and solid state physics, as well as those engaged in designing various Schottky barrier devices. The book may be
of use also for students and postgraduates specializing in the above areas.
Professor, Dr. Phys.-Math. Sci. K.D. Glinchuk
REVIEW OF A MONOGRAPHS
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irk-123456789-1198782017-06-15T19:00:56Z Review of a monographs Glinchuk, K.D. Review of a monographs In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device structures. For barrier contacts with a transition layer the aging mechanisms and role of mass transport in them are discussed. The physico-chemical peculiarities of the metal−InP (GaAs) interface formation, as well as feasibility of prediction of interactions between phases, are considered. 1999 Article Review of a monographs / K.D. Glinchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 111. назв. — англ. 1560-8034 http://dspace.nbuv.gov.ua/handle/123456789/119878 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
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| language |
English |
| topic |
Review of a monographs Review of a monographs |
| spellingShingle |
Review of a monographs Review of a monographs Glinchuk, K.D. Review of a monographs Semiconductor Physics Quantum Electronics & Optoelectronics |
| description |
In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device structures. For barrier contacts with a transition layer the aging mechanisms and role of mass transport in them are discussed. The physico-chemical peculiarities of the metal−InP (GaAs) interface formation, as well as feasibility of prediction of interactions between phases, are considered. |
| format |
Article |
| author |
Glinchuk, K.D. |
| author_facet |
Glinchuk, K.D. |
| author_sort |
Glinchuk, K.D. |
| title |
Review of a monographs |
| title_short |
Review of a monographs |
| title_full |
Review of a monographs |
| title_fullStr |
Review of a monographs |
| title_full_unstemmed |
Review of a monographs |
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review of a monographs |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| topic_facet |
Review of a monographs |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119878 |
| citation_txt |
Review of a monographs / K.D. Glinchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 111. назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT glinchukkd reviewofamonographs |
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2025-07-08T16:50:01Z |
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2025-07-08T16:50:01Z |
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1837098266562396160 |