Electric properties of the interface quantum dot — matrix
A theoretical research is presented concerning the potential distribution and electric field intensity in the InAs/GaAs nanoheterosystem with InAs QDs within the framework of self-consistent electron-deformation model. It is shown that at the strained border between a quantum dot and matrix there...
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| Date: | 2009 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики конденсованих систем НАН України
2009
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| Series: | Condensed Matter Physics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/119989 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electric properties of the interface quantum dot — matrix / R.M. Peleshchak, I.Ya. Bachynsky // Condensed Matter Physics. — 2009. — Т. 12, № 2. — С. 215-223. — Бібліогр.: 16 назв. — англ. |