Laser – induced donor centers in p-InSb
The laser – induced donor centers in p-Insb have been studied by magneto-concentration effect (MCE). The distribution of donor centers in the nonequilibrium temperature field in InSb was obtained by redistribution of the interstitial In atoms (IIn) and vacanciens VIn under laser action. Comparison o...
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| Datum: | 2000 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/120234 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Laser – induced donor centers in p-InSb / L. Fedorenko, A. Medvid // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 31-34. — Бібліогр.: 16 назв. — англ. |