Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals
In the paper methods of thermoluminescence (TSL) and time-resolved spectroscopy were used for investigation of shallow electron traps near edge of 4f⁰ band in CeO₂ and nonstoichiometric CeO₂₋x nanocrystals. It was shown that presence of the electronic traps located about 0.2 eV lower than the bottom...
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| Datum: | 2014 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2014
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| Schriftenreihe: | Functional Materials |
| Schlagworte: | |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/120408 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Role of shallow electronic traps formed by oxygen vacancies in formation of luminescent properties of CeO₂₋x nanocrystals / P.O. Maksimchuk, V.V. Seminko, I.I. Bespalova, A.A. Masalov // Functional Materials. — 2014. — Т. 21, № 2. — С. 152-157. — Бібліогр.: 23 назв. — англ. |