Temperature-induced metal-insulator transition in a non-symmetric Hubbard model at half-filling

In the present paper metal-to-insulator transition with the increase of temperature is studied in a narrow-band model with non-equivalent Hubbard subbands at half-filling. It is shown that the results obtained in the considered model are essentially distinct from those obtained in the Hubbard model...

Full description

Saved in:
Bibliographic Details
Date:1999
Main Authors: Didukh, L., Hankevych, V.
Format: Article
Language:English
Published: Інститут фізики конденсованих систем НАН України 1999
Series:Condensed Matter Physics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/120523
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Temperature-induced metal-insulator transition in a non-symmetric Hubbard model at half-filling / L. Didukh, V. Hankevych // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 447-452. — Бібліогр.: 24 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Description
Summary:In the present paper metal-to-insulator transition with the increase of temperature is studied in a narrow-band model with non-equivalent Hubbard subbands at half-filling. It is shown that the results obtained in the considered model are essentially distinct from those obtained in the Hubbard model. The results are applied to the interpretation of some experimental data.