Temperature-induced metal-insulator transition in a non-symmetric Hubbard model at half-filling
In the present paper metal-to-insulator transition with the increase of temperature is studied in a narrow-band model with non-equivalent Hubbard subbands at half-filling. It is shown that the results obtained in the considered model are essentially distinct from those obtained in the Hubbard model...
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| Datum: | 1999 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
1999
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| Schriftenreihe: | Condensed Matter Physics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/120523 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Temperature-induced metal-insulator transition in a non-symmetric Hubbard model at half-filling / L. Didukh, V. Hankevych // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 447-452. — Бібліогр.: 24 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | In the present paper metal-to-insulator transition with the increase of temperature is studied in a narrow-band model with non-equivalent Hubbard
subbands at half-filling. It is shown that the results obtained in the considered model are essentially distinct from those obtained in the Hubbard
model. The results are applied to the interpretation of some experimental
data. |
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