Experimental studies of the recombination processes in II-VI semiconductors (bulk crystals and epilayers) at variable excitation levels
Low-temperature luminescence spectra under broad-scale variation of an excitation level Iexc are studied for ZnS/ZnSe single quantum wells (QW) and for CdS bulk crystals and epilayers. In the first case, the manifestations turn out to be of the heterointerface inhomogeneity - i.e. fluctuations of Q...
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| Datum: | 1999 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
1999
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| Schriftenreihe: | Condensed Matter Physics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/120545 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Experimental studies of the recombination processes in II-VI semiconductors (bulk crystals and epilayers) at variable excitation levels / M.S. Brodyn, S.G. Shevel, V.V. Tishchenko // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 531-542. — Бібліогр.: 26 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Low-temperature luminescence spectra under broad-scale variation of an
excitation level Iexc are studied for ZnS/ZnSe single quantum wells (QW)
and for CdS bulk crystals and epilayers. In the first case, the manifestations
turn out to be of the heterointerface inhomogeneity - i.e. fluctuations of QW
thickness. The position of the mobility edge for excitons localized by fluctuations is determined. In the second case the effect of the increase of Iexc
is systematically studied not only for excitonic but also for impurity-related
edge luminescence. Contrary to the earlier and commonly assumed expectations, up to the highest Iexc close to damage threshold no saturation of
edge luminescence intensity was observed in bulk CdS crystals, whereas
in a few thick epilayers such saturation did occur. The suggested qualitative
explanation takes into account diffusion (non-diffusive transport) of carriers
beyond the excited near-surface layer. |
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