Additional lines in quantum wells excitonic spectra connected with QW asymmetry caused by technology
The calculations of intensity ratio of both the main and additional lines, the energy differences between which are fulfilled for quantum well (QW) with asymmetrical potential profile, are presented here. It is grounded on the basis of this calculation that additional line in exciton spectrum of QW...
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| Date: | 1999 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики конденсованих систем НАН України
1999
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| Series: | Condensed Matter Physics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/120546 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Additional lines in quantum wells excitonic spectra connected with QW asymmetry caused by technology / S.M. Ryabchenko, F.V. Kirichenko, Yu.G. Semenov, V.G. Abramishvili, A.V. Komarov // Condensed Matter Physics. — 1999. — Т. 2, № 3(19). — С. 543-552. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The calculations of intensity ratio of both the main and additional lines, the
energy differences between which are fulfilled for quantum well (QW) with
asymmetrical potential profile, are presented here. It is grounded on the
basis of this calculation that additional line in exciton spectrum of QW can
be explained by transitions between the confined states of valence and
conductivity electrons with different parity, which ceases to be forbidden in
the presence of asymmetry of QW potential profile caused by technology
of growth. It is shown that e1-hh2 additional exciton line is more intensive
in most of the actual cases. In particular, it is shown that the additional
exciton line, which was observed in the laser ablation grown structures
with QW, may be explained as e1-hh2 transition. The calculations show the
substantial sensitivity of the results not only to the parameter of widening
of the interface, but to the detailed type of the interface profile function. It is
concluded that the laser ablation method of heterostructure growth leads
to a larger asymmetry of QW potential profile caused by technology than
MBE potential profile. |
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