Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics
As a result of research of polishing single crystal materials it is shown that the material removal rate of the processed material depends on the volumetric wear coefficient and friction path length of element of the processed surface on the surface of lapping. It is found that the polishing flat su...
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| Date: | 2016 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
НТК «Інститут монокристалів» НАН України
2016
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| Series: | Functional Materials |
| Subjects: | |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/120560 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Polishing substrates of single crystal silicon carbide and sapphire for optoelectronics / O.Yu. Filatov, V.I. Sidorko, S.V. Kovalev, Y.D. Filatov, A.G. Vetrov // Functional Materials. — 2016. — Т. 23, № 1. — С. 104-110. — Бібліогр.: 24 назв. — англ. |