Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions
The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the input resistance and capacitance are considered, the influence of the PD radiant...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Zitieren: | Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions / V.M. Hodovaniouk, I.V. Doktorovych, V.K. Butenko, V.H. Yuryev, Yu.G. Dobrovolsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 83-86. — англ. |
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irk-123456789-1206442017-06-13T03:02:36Z Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions Hodovaniouk, V.M. Doktorovych, I.V. Butenko, V.K. Yuryev, V.H. Dobrovolsky, Yu.G. The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the input resistance and capacitance are considered, the influence of the PD radiant-flux characteristic under background radiation and the preamplifier output signal dependence on the background current and intrinsic resistance are investigated. It is shown that the change of the PD parameters under background radiation is similar to the influence of the PD equivalents – equivalents of capacitance and resistance. 2005 Article Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions / V.M. Hodovaniouk, I.V. Doktorovych, V.K. Butenko, V.H. Yuryev, Yu.G. Dobrovolsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 83-86. — англ. 1560-8034 PACS: 85.60 Dw http://dspace.nbuv.gov.ua/handle/123456789/120644 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the input resistance and capacitance are considered, the influence of the PD radiant-flux characteristic under background radiation and the preamplifier output signal dependence on the background current and intrinsic resistance are investigated. It is shown that the change of the PD parameters under background radiation is similar to the influence of the PD equivalents – equivalents of capacitance and resistance. |
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Article |
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Hodovaniouk, V.M. Doktorovych, I.V. Butenko, V.K. Yuryev, V.H. Dobrovolsky, Yu.G. |
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Hodovaniouk, V.M. Doktorovych, I.V. Butenko, V.K. Yuryev, V.H. Dobrovolsky, Yu.G. Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Hodovaniouk, V.M. Doktorovych, I.V. Butenko, V.K. Yuryev, V.H. Dobrovolsky, Yu.G. |
| author_sort |
Hodovaniouk, V.M. |
| title |
Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions |
| title_short |
Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions |
| title_full |
Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions |
| title_fullStr |
Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions |
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Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions |
| title_sort |
silicon photodiode and preamplifier operation characteristic properties under background radiation conditions |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2005 |
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http://dspace.nbuv.gov.ua/handle/123456789/120644 |
| citation_txt |
Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions / V.M. Hodovaniouk, I.V. Doktorovych, V.K. Butenko, V.H. Yuryev, Yu.G. Dobrovolsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 83-86. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2025-07-08T18:16:26Z |
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2025-07-08T18:16:26Z |
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| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 83-86.
PACS: 85.60 Dw
Silicon photodiode & preamplifier characteristic properties
under background radiation conditions
V.M. Hodovaniouk, I.V. Doktorovych, V.K. Butenko, V.H. Yuryev, Yu.G. Dobrovolsky
Rhythm Optoelectronics Inc., Chernivtsi, Ukraine
Abstract. The investigation results of a silicon photodiode (PD) operation with a
preamplifier under background radiation conditions are presented. The preamplifier
output signal and its frequency characteristic dependence on the input resistance and
capacitance are considered, the influence of the PD radiant-flux characteristic under
background radiation and the preamplifier output signal dependence on the background
current and intrinsic resistance are investigated. It is shown that the change of the PD
parameters under background radiation is similar to the influence of the PD equivalents –
equivalents of capacitance and resistance.
Keywords: photodiode, silicon, preamplifier, radiant-flux characteristic, frequency,
background radiation.
Manuscript received 20.12.04; accepted for publication 18.05.05.
1. Introduction
As a rule, to investigate light fluxes and fields various
photodetectors are used. Experiment results as a whole
depend on measurement correctness. This why, the
problem of reliability of the results obtained during the
photometric measurements always remain as the high-
priority one.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
In this paper, considered is the case when an optical
signal is registered by the photodiode (PD) under
background radiation conditions, i.e., the PD is
influenced not only by the light flux under study but also
with an additional background flux generated by visible
light and other optical sources.
2. Investigation of the preamplifier operation
characteristic properties with the PD equivalent
under background radiation
To a great extent, the PD photoelectric parameters
depend on their measurement conditions and modes.
Under real conditions, to amplify the signal generated by
the PD under the influence of optical radiation a
preamplifier is used. It is usually mounted together with
the PD or used in the same package as the PD. The PD
influence on the preamplifier parameters is rather
complex, and the superposition of the background
radiation complicates the situation. That’s why, to
analyze the PD operation with the preamplifier, the PD
influence was simulated using the input capacitances and
loads.
2.1. Investigation of output signal and preamplifier
frequency characteristics influenced by variable
capacitance
1 2 3 4
5 6
Fig. 1. The block diagram for measurements of the
preamplifier assembled frequency characteristics. 1 – G3-112
low-frequency generator; 2 – current-holding resistor Rr =
= 10 MOhm; 3 – amplifier under investigation; 4 – B3-38
millivoltmeter; 5 – capacitor (resistor) – PD equivalent; 6 –
C1-64 oscillograph.
To investigate the preamplifier parameters, there was
performed a computer analysis of its frequency
characteristic influenced by variable capacitance and
resistance connected to the input of the preamplifier. In
much the same way the frequency characteristics of the
preamplifier assembled were measured. The
measurement was made in the range of 2 to 100 Hz
using a test unit, the block diagram of which is shown in
Fig. 1.
Equivalent capacitances were chosen within the
range 47 to 10,000 pF, equivalent resistances – from 100
down to 0.3 kОhm.
The results of measuring the frequency characteristic
dependence on the input capacitance depicted in
Figs 2, 3.
83
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 83-86.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
.
300
200
100
0
Uout, , mV
300
200
100
1 10 102 103 f, kHz
Uout, , mV
1500 pF
150 pF
470 pF
300 pF
10 102 103 104 С, pF
Fig. 2. The preamplifier output signal dependence (fm =
= 20 kHz) upon the input capacitance.
no Сequiv
Fig. 3. The preamplifier frequency characteristic depen-
dence on the input capacitance.
102 103 104 105 R, Оhm
150
100
50
Uout, mV Uout, mV
150
100
50
1,0 10 102 103 f, kHz
360Ohm
100kOhm
no Requiv
10kОhm
Fig. 5. The preamplifier frequency characteristic as a function
of the input resistance.
Fig. 4. The preamplifier output signal (fm = 20 kHz)
as a function of the input resistance.
84
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 83-86.
2.2. Investigation of the output signal and the
preamplifier frequency characteristics influenced by
variable resistance
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Similarly, investigations of the preamplifier
amplitude-frequency characteristics under input
resistance variation were carried out. The measurement
results of the frequency characteristic dependence on the
input resistance are shown in Figs 4, 5.
After analyzing the measured preamplifier frequency
characteristics, one can draw a conclusion that these
characteristics are similar to the simulated ones in their
amplitude and shape.
3. Investigation of the preamplifier operation
characteristic properties with a real PD under
background radiation conditions
As far as the photoelectric parameters of a real PD to a
great extent depend on their measurement conditions and
mode, in real conditions, its influence on the
preamplifier parameters is more complex, and it is
sufficiently difficult to make a real PD equivalent.
3.1. Investigation of the PD current monochromatic
responsivity under background radiation conditions
Fig. 6. The test unit block diagram: 1 – G3-112 low-frequency
generator; 2 – B5-30 emitter power supply unit; 3 – contact
device; 4 – LED of operating wavelength; 5 – PD; 6 – PD
B5-43 power supply unit; 7 – transducer; 8 – B3-38
millivoltmeter; 9 – C1-64 oscillograph.
Note. As the converter 7 we used the following: 1 – U2-8 (load
in the PD circuit R1 = 1 kОhm and R2 = 10 kОhm); 2 – current-
voltage transducer (CVT) developed by Rhythm
Optoelectronics (conversion ratio of К1 = 103; К2 = 104;
К3 = 105; К4 = 106, and К5 = 107 V/А).
To provide correct measurements of the PD current
monochromatic responsivity under background radiation
conditions, Rhythm Optoelectronics Inc. used a specially
developed test unit, the block diagram of which is
presented in Fig. 6.
To derive the emitter frequency characteristic from
the measurement results, its frequency characteristic was
determined. For this purpose, there were used a low-
response-time silicon reference PD (Uop = 200 V) and
the CVT with the frequency characteristic not less than
200 kHz at К = 104 V / А. As a result of the
measurement (see Table), it was ascertained that the
radiation flux level is frequency-independent (in the
Fig. 7. 1 – G3-112 low-frequency generator; 2 – B5-30 emitter
supply unit; 3 – ADB7.5490 contact device; 4 – LED of
λmax = 1.06 μm; 5 – PD under investigation; 6 – B5-43 PD
power supply unit; 7 – preamplifier (R = 510 kОhm); 8 –
V3-38 voltmeter; 9 – С1-64 oscillograph; 10 – B5-44 power
supply unit of a background radiation source.
Fig. 8. 1 – B5-44 emitter power supply unit; 2 – background
radiation source – the AL107 LEDs array; 3 – PD under
investigation; 4 – M2015 voltammeter.
measuring circuit presented) up to 50 kHz, and, thus, the
emitter does not influence on the measurement results.
As a result of these investigations, the absolute
values of the current monochromatic responsivity
appeared to be reliable, being measured using the above
circuit with the U2-8 transducer and the load 1 kOhm. In
measurements according to other techniques, a great
mistake appears because of the influence of PD
parameters on the transducer and the PD amplitude-
frequency characteristics.
3.2. Investigation of the PD parameters influence on the
preamplifier output signal under background radiation
conditions
To investigate the influence of the PD parameters on the
preamplifier output under background radiation
conditions, an emitter providing the PD radiation with
operating and background fluxes was produced. The
operating radiation level provided the measurement of
the PD parameters on the linear section of the
photocurrent-radiant flux characteristic, and remained
unchanged during the measurements.
The results of measuring the emitter amplitude-frequency
characteristics.
f, kHz 0.1 1.0 10 20 50
Light flux,
rel. units 1.0 1.0 1.0 1.0 1.0
1
2
8
9
3 4 5 7
6
Light signal form monitoring synchronization
1
3
2
4 5
6
7
9
10 8
1 2 3 4
85
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 83-86.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Fig. 9. The radiant-flux characteristic of various uniform PDs
The measurement of the preamplifier output signal
under background radiation was carried out using the
simulating model unit, the structural model of which is
shown in Fig. 7.
The measurement was conducted in the following
way: after illumination of the PD by the operation flux
of the optical radiation, the signal at the input of the
preamplifier was measured under no-background
radiation conditions. Then, the background radiation was
moothly increased up to the value at which the signal
disappeared. The level at which the signal disappeared
appeared to be different. It is different even for a PD
with the same responsivity values. It can be explained by
the fact that the dynamic range, and the compensation
circuit of the preamplifier background signal balances
out a certain level of the background signal, if different
PDs is not the same.
To measure the dynamic range of the PD, the
simulating model unit was used. Its structural model is
shown in Fig. 8.
.
Fig. 10. The preamplifier output signal as a function of the
input background current (Іbackgr) and intrinsic resistance (RPD):
1 – Uout = f(Requiv); 2 – 6 – dependences for PDs of different
radiant-flux characteristic linearity levels (N 2 of linear
characteristic up to 12 mА, N 4 – up to 1 mА).
The measurement results of PD dynamic range and
the preamplifier output signal under background
radiation are presented in Figs 9 and 10, accordingly.
4. Conclusion
Thus, our investigation of the preamplifier output signal
under background radiation conditions has shown that
the change of the PD parameters under the influence of
the background radiation is analogous to the influence of
the PD equivalents – the equivalents in capacitance and
resistance. That’s why, to apply the PD in corresponding
equipment it is necessary to take into account its
dynamic range, and the frequency characteristics of the
preamplifier that should be expanded to the values at
which the background radiation will be able to take out
of the limits of the system operating frequency.
Іbackgr, mА Uout, mV
0 20 40 50 60 Р, m
12
8
4
0
300
200
100
0W
2
3
1
4
6
5
1.0 5 10 І , mА backgr
PD
2 0.4 0.2 RPD, kОhm
86
Abstract. The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the input resistance and capacitance are considered, the influence of the PD radiant-flux characteristic under background radiation and the preamplifier output signal dependence on the background current and intrinsic resistance are investigated. It is shown that the change of the PD parameters under background radiation is similar to the influence of the PD equivalents – equivalents of capacitance and resistance.
1. Introduction
|