Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions

Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions

The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the input resistance and capacitance are considered, the influence of the PD radiant...

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Bibliographic Details
Date:2005
Main Authors: Hodovaniouk, V.M., Doktorovych, I.V., Butenko, V.K., Yuryev, V.H., Dobrovolsky, Yu.G.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/120644
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions / V.M. Hodovaniouk, I.V. Doktorovych, V.K. Butenko, V.H. Yuryev, Yu.G. Dobrovolsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 83-86. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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