Filter for TV and video cameras

An infrared-cut filter for TV and video cameras was calculated and fabricated. The filter contains 28 alternating SiO₂ and TiO₂ layers. The filter was calculated using the principle of unequal-thickness layers. This filter has a transmittance of 95 % in 400 to 650 nm range and 1 % in 700 to1150 nm r...

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Дата:2005
Автори: Berezhinsky, L.I., Dae-Yong Park, Chang-Min Sung, Kwang-Ho Kwon, Sang-Hoon Chai
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/120647
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Filter for TV and video cameras / L.I. Berezhinsky, Dae-Yong Park, Chang-Min Sung, Kwang-Ho Kwon, Sang -Hoon Chai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 106-109. — Бібліогр.: 5 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1206472017-06-13T03:06:36Z Filter for TV and video cameras Berezhinsky, L.I. Dae-Yong Park Chang-Min Sung Kwang-Ho Kwon Sang-Hoon Chai An infrared-cut filter for TV and video cameras was calculated and fabricated. The filter contains 28 alternating SiO₂ and TiO₂ layers. The filter was calculated using the principle of unequal-thickness layers. This filter has a transmittance of 95 % in 400 to 650 nm range and 1 % in 700 to1150 nm range. 2005 Article Filter for TV and video cameras / L.I. Berezhinsky, Dae-Yong Park, Chang-Min Sung, Kwang-Ho Kwon, Sang -Hoon Chai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 106-109. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 68.55.J; 42.79.Fm http://dspace.nbuv.gov.ua/handle/123456789/120647 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description An infrared-cut filter for TV and video cameras was calculated and fabricated. The filter contains 28 alternating SiO₂ and TiO₂ layers. The filter was calculated using the principle of unequal-thickness layers. This filter has a transmittance of 95 % in 400 to 650 nm range and 1 % in 700 to1150 nm range.
format Article
author Berezhinsky, L.I.
Dae-Yong Park
Chang-Min Sung
Kwang-Ho Kwon
Sang-Hoon Chai
spellingShingle Berezhinsky, L.I.
Dae-Yong Park
Chang-Min Sung
Kwang-Ho Kwon
Sang-Hoon Chai
Filter for TV and video cameras
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Berezhinsky, L.I.
Dae-Yong Park
Chang-Min Sung
Kwang-Ho Kwon
Sang-Hoon Chai
author_sort Berezhinsky, L.I.
title Filter for TV and video cameras
title_short Filter for TV and video cameras
title_full Filter for TV and video cameras
title_fullStr Filter for TV and video cameras
title_full_unstemmed Filter for TV and video cameras
title_sort filter for tv and video cameras
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2005
url http://dspace.nbuv.gov.ua/handle/123456789/120647
citation_txt Filter for TV and video cameras / L.I. Berezhinsky, Dae-Yong Park, Chang-Min Sung, Kwang-Ho Kwon, Sang -Hoon Chai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 106-109. — Бібліогр.: 5 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT berezhinskyli filterfortvandvideocameras
AT daeyongpark filterfortvandvideocameras
AT changminsung filterfortvandvideocameras
AT kwanghokwon filterfortvandvideocameras
AT sanghoonchai filterfortvandvideocameras
first_indexed 2025-07-08T18:16:42Z
last_indexed 2025-07-08T18:16:42Z
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fulltext Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 106-109. © 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine 106 PACS: 68.55.J; 42.79.Fm Filter for TV and video cameras L.I. Berezhinsky1, Dae-Yong Park2, Chang-Min Sung2, Kwang-Ho Kwon3, and Sang-Hoon Chai4 1 Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine Phone: +38 (044) 525-5778. E-mail: lib1938@yahoo.com 2 Havit Information Co., 59-3 Jang-Dong, Yusong-gu, Daejeon, 305-343, Korea E-mail: bspark@havit.co.kr 3 Department of Electronic Engineering, Hanseo University, 360, Daegok-Ri, Haemi-Myun, Seosan, Choongnam, 356-820, Korea. E-mail: khkwon@creneed.com 4 Department of Electronic Engineering, Hoseo University, 21, Sechul-Ri, Baebang-Myun, Asan, Choongnam, 336- 795, Korea Abstract. An infrared-cut filter for TV and video cameras was calculated and fabricated. The filter contains 28 alternating SiO2 and TiO2 layers. The filter was calculated using the principle of unequal-thickness layers. This filter has a transmittance of 95 % in 400 to 650 nm range and 1 % in 700 to1150 nm range. Keywords: interference coating, multilayer interference filter, cut filter. Manuscript received 14.01.05; accepted for publication 18.05.05. It is necessary to use infrared-cut filters to create a high- quality image using TV and video cameras in natural (solar) light. This necessity is caused by the following fact. Human eyes perceive light within the spectral range 400 to 700 nm. However, the photosensitivity of a photodetector (as a rule, is a silicon-target matrix used in TV and video cameras reaches up to 1200 nm. Therefore, the presence of a photocurrent produced by 700 to 1200 nm waves in a total electric signal is undesirable because it does not carry any useful information about image colors. This allows to formulate the following requirements for optical properties of filters: the transmittance in 400 to 650 nm range should be not less than 90 – 95 % and no more than 1 % in 700 to1200 nm range. In [1], it was reported about the filter provided the transmittance of more than 90 % in 400 to 700 nm range and less than 1 % in 700 to 930 nm one. At the same time, this filter has the very high transmittance (80 – 90 %) in the region of 1000 to 1200 nm. It seems that the role of this transmittance can be ignored because the photosensitivity of silicon in this region is very small. However, a simple calculation shows that it is not so. The solar radiation power in 1000 to 1200 nm range near the Earth surface contains from 18 to 20 % of the solar radiation power in the whole visible region of 400 to 650 nm. Therefore, the contribution into a total photocurrent from 1000 to 1200 nm waves can be appreciable despite the small photosensitivity of silicon in this region. In this article, we describe a filter with the transmittance of about 95 % within the region of 400 to 650 nm and its improved characteristics in the region of 1000 to 1200 nm. The filter represents the system (nHnL) NnH of alternating layers with high- and low-refractive indexes and optical thickness nd = λ / 4 (λ – characteristic wavelength, d – layer thickness). As nL material we used SiO2 with the refractive index nL = 1.45454, and as nH material we used TiO2 with nH = 2.25565. According to M. Born and E. Wolf [2], the reflection of a multilayer system reaches 99 % at N = 6, i.e., a filter must contain 13 alternating layers nH, nL, nH, nL,…, nH. A band where the filter has a very high reflection is called the suppression band, designated as R100. The wavelength corresponding to the middle of R100 band is designated as λ0 (reference wavelength). The layers have the optical thickness equal to λ0 / 4. The half-width of R100 band in the units g = λ0 / λ depends only on the difference between refractive indexes nH and nL and is defined by the following expression [3]: LH LHarcsin2 nn nng + − π =Δ . (1) Let us define the width of R100 band for our data. The high reflection region of our filter should extend from 700 to 1200 nm. The center of this range lies at λ0 = 950 nm. Substituting nH = 2.25565 and nL = 1.45454 into (1) we get Δg ≈ 0.13. R100 bandwidth has the value of λ0·2Δg = 247 nm. Thus, our materials SiO2 and TiO2 can supply only 247 nm R100 bandwidth, while the filter bandwidth should have its extent of 1200 – 700 = 500 nm. It means that to construct a filter with 500 nm R100 bandwidth it is necessary to use two (or three) systems of layers with different reference wavelengths λ0' and λ0". The wavelengths λ0' and λ0" are chosen from the requirement that the bands of high Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 106-109. © 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine 107 reflection partly overlap. It is clear that the formation of R100 band with the width of 500 nm by means of two- layer systems with different λ0' and λ0" using 2SiOn and 2TiOn is a very difficult task. At the same time, the usage of three-layer systems makes the filter design very complex, and its practical realization is very difficult. We have constructed a filter of two systems such as (HL)6H with λ0' = 736 nm and λ0" = 900 nm and achieved further widening R100 band by means of suppression (increasing) of lateral transmittance minima. We obtained the suppression band from 680 to 1050 nm with transmittance of 1 to 1.5 %. However, a large number of lateral transmittance minima arises on the shortwave side of this band in the region of 400 to 650 nm and on the longwave one of 1050 nm. The lateral minima in the region of 400 to 650 nm are generated by the layer system at λ0' = 736 nm, and the ones with wavelengths longer than 1050 nm are generated by the layer system at λ0" = 900 nm. The number of these lateral minima is equal to the number of layers in every system, and their depths reach 60 %. Hence, the problem of a filter construction lies in elimination of these minima and preservation of the transmittance in the range of 400 to 600 nm at the level of 95 % and vice versa increasing the depth of transmittance minima down to zero in the region of 1050 to1200 nm. There are a few receptions to correct the transmittance on both sides of R100 band. One of them is to use layers with unequal optical thicknesses according the condition nHhH + nLhL = λ0 / 2, (2) where hH and hL are geometrical thicknesses of layers with a high- and low-refractive indexes. The transmittance is increased in a shortwave range of R100 band and simultaneously is decreased in a longwave range when nHhH / nLhL > 1. The relation nHhH / nLhL < 1 gives the opposite result. A very effective method for increasing the transmittance of a lateral minimum is creation of the last nL layer at the optical thickness λ0 / 8 on the surface of this multilayer system. However, it should be noted that the use of such layer as well as introduction of matching layers between the substrate and multilayer system does not allow to obtain the transmittance more than 80 % in 400 to 420 nm range. The range of 400 to 420 nm is shortwave in relation to R100 band with the center at λ0' = 736 nm. However, it can be considered as the longwave one in relation to R100 band with the center at λ01, which satisfies the condition nHhH = nLhL = (3/4)λ01 (3) or (3/4) λ01= (1/4) λ0'; λ01 < λ0'. (4) Fig. 1. Optical characteristic of IR-cut filter (simulation): 1 – this work, 2 – filter from [1]. Fig. 2. Optical characteristic of the real IR-cut filter (experiment). Fig. 3. Optical characteristics of IR-cut filters, produced by Melles Griot (USA) (1) and Taeyoung (Korea) (2). Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 106-109. © 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine 108 The design and layer thicknesses of the IR cut-filter. Layer Material Refractive index Optical thickness (in λ0) 1 SiO2 1.45454 0.170 2 TiO2 2.25565 0.332 3 SiO2 1.45454 0.335 4 TiO2 2.25565 0.329 5 SiO2 1.45454 0.332 6 TiO2 2.25565 0.325 7 SiO2 1.45454 0.331 8 TiO2 2.25565 0.316 9 SiO2 1.45454 0.330 10 TiO2 2.25565 0.316 11 SiO2 1.45454 0.330 12 TiO2 2.25565 0.316 13 SiO2 1.45454 0.330 14 TiO2 2.25565 0.316 15 SiO2 1.45454 0.295 16 TiO2 2.25565 0.250 17 SiO2 1.45454 0.270 18 TiO2 2.25565 0.250 19 SiO2 1.45454 0.270 20 TiO2 2.25565 0.250 21 SiO2 1.45454 0.265 22 TiO2 2.25565 0.235 23 SiO2 1.45454 0.270 24 TiO2 2.25565 0.240 25 SiO2 1.45454 0.275 26 TiO2 2.25565 0.235 27 SiO2 1.45454 0.285 28 TiO2 2.25565 0.285 Substrate Glass 1.51218 It means that we can consider a band with the center λ01 as a band of the next order concerning the band with the center λ0'. Therefore, if we change the transmittance of the filter in the longwave range for λ0' band, we simultaneously in the same way change the transmittance in the longwave range for λ01 band, i.e., in 400 – 420 nm range. On this basis, we have used layers of an unequal optical thickness for increasing the transmittance in the longwave range of λ0' = 736 nm. Choosing the layer geometrical thickness we used the relationship α·nHhH + (2 – α) nLhL = λ0' / 2, (5) where the coefficient α < 1 and nHhH = nLhL = λ0'/4. For optimizing the value of α, we used the geometrical thicknesses hH' and hL' with the relation nLhL' / nHhH' = 1.2. The transmittance of 90 to 95 % in the range 400 to 420 nm was obtained for these layer thicknesses. However, the transmittance in the range of 550 to 650 nm was decreased. We have tried to improve the reduction of transmittance in the range of 500 to 650 nm introducing the additional and matching layers. The deposition of the latter layer with λ0'/8 optical thickness allowed to increase the transmittance in this range up to 80 %. Further magnification was achieved by the introduction of the matching λ0'/4 layer between the substrate and multilayer system. The refractive index of the matching layer can be found from the relationship [4] SEnNn = , (6) where NE is the effective refractive index of the multilayer system, and nS is the refractive index of the substrate. It may happen so that a substance with refractive index n is nonexistent in nature. In this case, it is possible to construct system of three layers such as (aHbLaH) that will play functionally the same role as well as a quarter-wave layer with refractive index n. Coefficients a and b can be determined by the method of effective layers [5]. For our case, the refractive index of the matching layer and its design was calculated in [1]. The filter was constructed on the basis of two-layer systems with the reference waves λ0' = 736 nm and λ0" = 900 nm. After the combination of these systems on the substrate, the optimization of the layer thickness at the interface of these systems was carried out using a Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 106-109. © 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine 109 computer. The final filter contains 28 layers and has the structure (0.44L, 0.88H, 0.44L)0.5L(HL)12H0.5L. The layer thicknesses are summarized in Table. The transmittance of the calculated filter and filter from [1] is shown in Fig. 1. It is seen that, in the visible range, the transmittance is nearly the same for both filters and reaches 95 % in 450 to 620 nm range. The transmittance of the calculated filter averages about 2 to 3 % higher than that of the filter in [1]. In the infrared region, however, the distinction of transmittance is drastic. The calculated filter has the transmittance close to zero in the region from 700 to 1030 nm, 5 % – in the region of 1050 to 1120 nm, and, only for 1150–1200 nm, the trans- mittance band of more than 80 % is observed. The transmittance of the obtained filter manufactured using the above-mentioned design is shown in Fig. 2. The small (~ 3 %) transmittance reduction of the real filter as compared with the simulated one is caused by monitoring errors for layer thicknesses during manufacturing. The accuracy of the latter was ± 2 nm. For comparison, the transmittance of available commercial filters comprising 29 to 30 layers and manufactured by Taeyoung (Korea) and Melles Griot (USA), which are used in modern TV and video cameras, are shown in Fig. 3. References 1. L. Berezhinsky, K.H. Kwon, B.S. Park, Infrared-cut filter // Jpn J. Appl. Phys. 40, N 10, p. 5953-5954 (2001). 2. M. Born and E. Wolf, Principles of optics. Pergamon Press, Oxford, 2nd ed., p. 51 (1964). 3. T.N. Nikolayeva, Interference coverings, Mashinostroyeniye, Leningrad (1973) (in Russian) . 4. H.A. Macleod, Thin-film optical-filters. Adam Hilger, Bristol, p. 73 (1986). 5. L.I. Epstein, The design of optical filters // J. Opt. Soc. Amer. 12, N 11, p. 806-810 (1952).