Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study
Using the method of high-resolution X-ray diffraction (HRXRD), we have studied 17-period In₀.₃Ga₀.₇As/GaAs multilayer structure with self-assembled quantum wires (QWRs) grown by the MBE and subjected to postgrowth rapid thermal annealing (RTA) at temperatures (Tann) from 550 to 850 °C for 30 s. It h...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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irk-123456789-1206502017-06-13T03:02:39Z Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study Strelchuk, V.V. Kladko, V.P. Yefanov, O.M. Kolomys, O.F. Gudymenko, O.I. Valakh, M.Ya. Using the method of high-resolution X-ray diffraction (HRXRD), we have studied 17-period In₀.₃Ga₀.₇As/GaAs multilayer structure with self-assembled quantum wires (QWRs) grown by the MBE and subjected to postgrowth rapid thermal annealing (RTA) at temperatures (Tann) from 550 to 850 °C for 30 s. It has been shown that the spatial arrangement of QWRs (lateral and vertical) causes the quasi-periodical strain distribution, the strains being essentially anisotropic relatively to crystallographic directions of 〈011〉 type. At Tann ≤ 750 °С, the driving mechanism of structural transformations is relaxation of residual strains due to thermally-activated and strain-enhanced processes of In/Ga atom interdiffusion at the interface QWRs-2D layer, which does not result in considerable changes of the In concentration in (In,Ga)As QWRs. The presence of two superlattice vertical periods in the samples under study and their changes during RTA we explained by an anisotropic character of elastic strain distribution and lowered structure symmetry. The revealed increase in the (In,Ga)As QWRs lateral period caused by RTA is a direct evidence of running lateral mass-transfer processes and can be explained using the model “nucleation plus strain-enhanced In/Ga atom lateral interdiffusion”. At low annealing temperatures, there takes place dissolution of intermediate QWRs as a result of interdiffusion enhanced by residual anisotropic strains. At high RTA temperatures, the interdiffusion process is mainly determined by the composition gradient existing between QWRs and 2D layer. 2005 Article Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study / V.V. Strelchuk, V.P. Kladko, O.M. Yefanov, O.F. Kolomys, O.I. Gudymenko, M.Ya. Valakh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 36-45. — Бібліогр.: 28 назв. — англ. 1560-8034 PACS: 61.72.Dd, 78.67.Lt http://dspace.nbuv.gov.ua/handle/123456789/120650 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Using the method of high-resolution X-ray diffraction (HRXRD), we have studied 17-period In₀.₃Ga₀.₇As/GaAs multilayer structure with self-assembled quantum wires (QWRs) grown by the MBE and subjected to postgrowth rapid thermal annealing (RTA) at temperatures (Tann) from 550 to 850 °C for 30 s. It has been shown that the spatial arrangement of QWRs (lateral and vertical) causes the quasi-periodical strain distribution, the strains being essentially anisotropic relatively to crystallographic directions of 〈011〉 type. At Tann ≤ 750 °С, the driving mechanism of structural transformations is relaxation of residual strains due to thermally-activated and strain-enhanced processes of In/Ga atom interdiffusion at the interface QWRs-2D layer, which does not result in considerable changes of the In concentration in (In,Ga)As QWRs. The presence of two superlattice vertical periods in the samples under study and their changes during RTA we explained by an anisotropic character of elastic strain distribution and lowered structure symmetry. The revealed increase in the (In,Ga)As QWRs lateral period caused by RTA is a direct evidence of running lateral mass-transfer processes and can be explained using the model “nucleation plus strain-enhanced In/Ga atom lateral interdiffusion”. At low annealing temperatures, there takes place dissolution of intermediate QWRs as a result of interdiffusion enhanced by residual anisotropic strains. At high RTA temperatures, the interdiffusion process is mainly determined by the composition gradient existing between QWRs and 2D layer. |
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Strelchuk, V.V. Kladko, V.P. Yefanov, O.M. Kolomys, O.F. Gudymenko, O.I. Valakh, M.Ya. |
| spellingShingle |
Strelchuk, V.V. Kladko, V.P. Yefanov, O.M. Kolomys, O.F. Gudymenko, O.I. Valakh, M.Ya. Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Strelchuk, V.V. Kladko, V.P. Yefanov, O.M. Kolomys, O.F. Gudymenko, O.I. Valakh, M.Ya. |
| author_sort |
Strelchuk, V.V. |
| title |
Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study |
| title_short |
Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study |
| title_full |
Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study |
| title_fullStr |
Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study |
| title_full_unstemmed |
Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study |
| title_sort |
anisotropy of elastic deformations in multilayer (in,ga)as/gaas structures with quantum wires: x-ray diffractometry study |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2005 |
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http://dspace.nbuv.gov.ua/handle/123456789/120650 |
| citation_txt |
Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study / V.V. Strelchuk, V.P. Kladko, O.M. Yefanov, O.F. Kolomys, O.I. Gudymenko, M.Ya. Valakh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 36-45. — Бібліогр.: 28 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 36-45.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
36
PACS: 61.72.Dd, 78.67.Lt
Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs
structures with quantum wires: X-ray diffractometry study
V.V. Strelchuk1, V.P. Kladko1, O.M. Yefanov1, O.F. Kolomys1, O.I. Gudymenko1, M.Ya. Valakh1,
Yu.I. Mazur2, Z.M. Wang2, and G.J. Salamo2
1 V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: strelch@isp.kiev.ua
2 University of Arkansas, Department of Physics, Fayetteville, 72701 Arkansas
Abstract. Using the method of high-resolution X-ray diffraction (HRXRD), we have
studied 17-period In0.3Ga0.7As/GaAs multilayer structure with self-assembled quantum
wires (QWRs) grown by the MBE and subjected to postgrowth rapid thermal annealing
(RTA) at temperatures (Tann) from 550 to 850 °C for 30 s. It has been shown that the
spatial arrangement of QWRs (lateral and vertical) causes the quasi-periodical strain
distribution, the strains being essentially anisotropic relatively to crystallographic
directions of 〈011〉 type. At Tann ≤ 750 °С, the driving mechanism of structural
transformations is relaxation of residual strains due to thermally-activated and strain-
enhanced processes of In/Ga atom interdiffusion at the interface QWRs-2D layer, which
does not result in considerable changes of the In concentration in (In,Ga)As QWRs. The
presence of two superlattice vertical periods in the samples under study and their
changes during RTA we explained by an anisotropic character of elastic strain
distribution and lowered structure symmetry. The revealed increase in the (In,Ga)As
QWRs lateral period caused by RTA is a direct evidence of running lateral mass-transfer
processes and can be explained using the model “nucleation plus strain-enhanced In/Ga
atom lateral interdiffusion”. At low annealing temperatures, there takes place dissolution
of intermediate QWRs as a result of interdiffusion enhanced by residual anisotropic
strains. At high RTA temperatures, the interdiffusion process is mainly determined by
the composition gradient existing between QWRs and 2D layer.
Keywords: multilayer structures, quantum wires, elastic straines, X-ray diffraction.
Manuscript received 14.01.05; accepted for publication 18.05.05.
1. Introduction
Unique electrophysical and optical properties of
semiconductor nanostructures with quantum dots (QDs)
and quantum wires (QWRs) obtained in Stranski –
Krastanow mode using epitaxy of strained heterosystems
open new perspectives to create modern devices for
nano- and optoelectronics, for instance, laser diodes with
a low threshold current and power consumption [1].
From the viewpoint of practical applying of these
nanostructures, it is very important to reduce QDs sizes,
to increase the density of their surface distribution and
the ordering. Multilayer structures with spatially ordered
QDs and QWRs are characterized by high homogeneity
of their sizes, shapes as well as distances between QDs
and QWRs. As it was recently shown, growing the
(In,Ga)As/GaAs multilayer structures provides obtaining
of laterally ordered chains of (In,Ga)As QDs with the
length up to 5 μm [2] and (In,Ga)As QWRs [3, 4]. The
process of thermal annealing enables one to improve
homogeneity of QDs and QWRs size distribution. For
example, as a result of the thermal annealing of single-
layer (In,Ga)As/GaAs QDs [5] there was improved QDs
size homogeneity and was shown the possibility of
gradual changing the emission wave length. It was found
that strain-enhanced atom interdiffusion [6] plays an
important role in the process of InAs QDs annealing.
However, up to date, the mechanism of In/Ga
interdiffusion and structural transformations in
(In,Ga)As QDs and, moreover, in structures with
(In,Ga)As QWRs has not been ascertained yet. The
investigation of structural and optical properties of
spatially ordered multilayer structures as well as their
changes in the course of the thermal annealing is of great
interest to understand mechanisms of their epitaxial
growth and formation, to study the features of elastic
strain relaxation and generation of structural defects.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 36-45.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
37
Fig. 1. Schematic representation of experimental geometry for studying quantum wires: a, b − for 004 symmetrical reflection; c, d
− 311 asymmetrical reflection, where ϕ is the angle between the reflection plane and surface.
It is known that 2D-3D transition and the process of
three-dimensional QDs (or QWRs) formation in the
course of epitaxial deposition of InGaAs/GaAs layers
essentially changes the character of the elastic strain
distribution as compared with that in planar layers. In
multilayer structures, relaxation of elastic strains
induced by QDs or QWRs [7] is realized through their
spatial arrangement. In this case, there takes place an
anisotropic character of the strain distribution relatively
to crystallographic directions of 〈011〉 type [8], which
determines an anisotropy of structural parameters (for
example, lowering the structural symmetry [9]) and was
observed in planar heterostructures [10, 11]. This
structural anisotropy influences on X-ray diffraction,
which allows to use high-resolution X-ray
diffractometry in investigations of elastic strain
anisotropy in nanostructures with QDs and QWRs.
In this work, adduced are the results of structural
investigations of multilayer (In,Ga)As/GaAs (100)
structures with self-assembled (In,Ga)As QWRs after
RTA by HRXRD. The obtained results allows to
ascertain regularities of structural changes in the course
of the thermal annealing as well as to study peculiarities
of elastic strain relaxation in the spatially ordered
(In,Ga)As QWRs, which is of great importance for
understanding physical properties of quantum-sized
objects.
2. Sample
The samples used in this investigation were grown on
semi-insulating GaAs (100) substrates with a miscut
smaller than 0.05° by conventional solid-source
molecular beam epitaxy (MBE). After the native oxide
was desorbed from the GaAs substrate surface at 650 °C
for 10 min, the GaAs buffer layer of 500 nm thickness
was grown at T = 600 °C and the growth rate about one
monolayer (ML) per second. After that, the substrate
temperature was reduced down 540 °С, and 17 periods
of (11.5ML)In0.3Ga0.7As/(67ML)GaAs were deposited.
The growth rates of GaAs and In0.3Ga0.7As were equal to
0.4 and 0.8 ML/s, respectively. As4 beam equivalent
pressure was 10 μTorr for the whole structure growth.
The growth interruptions were introduced during the
deposition of the GaAs spacer [12].
Rapid thermal annealing was performed in argon
atmosphere at temperatures 550 to 850 °C for 30 s. The
time of setting the operation temperature was 10 s.
The structural morphology of the sample surface was
investigated using atomic force microscopy (AFM) in
the tapping mode.
3. Experimental details
The X-ray scattering experiments were performed using
double-crystal diffractometer (GaAs(100) crystal-
monochromator, CuKα radiation, the fourth reflection
order) for symmetrical 400 and asymmetrical 311
reflections. The sample was scanned in the vicinity of
the exact Bragg position close to 3° using the so-called
ω/2θ-mode. The measurements were performed in the
discrete angular mode with the step 2''. The registration
was realized in the accumulation regime for the pulse
quantity measured at the signal-to-noise ratio ≤ 10−4. In
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 36-45.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
41
[19]. In essence, the diffusion may provide a means of relaxing strain.
Structure parameters obtained using the experimental data of HRXRD and the method of numeric modelling
the experimental rocking curves.
GaAs 004 reflection GaAs 311 reflection Sample
Tann, °С dGaAs,
nm
dInGaAs,
nm
Λ⊥,
⎢⎢[011],
nm
Λ⊥ ,
⎢⎢[011],
nm
Хav ε⊥
(GaAs)
ε⊥
(InGaAs)
Λ⎥⎥,
nm
ε⎥⎥ (InGaAs)
Initial 19.7 3.09 22.79 22.05 0.27 0.00245 −0.02 83.9 0.0047
550 18.4 3.24 21.64 21.17 0.30 0.0025 −0.022 97.8 0.0052
600 19.7 3.27 22.97 22.93 0.30 0.0025 −0.02 106.5 0.0056
650 18.3 1.46 19.76 20.7 0.30 0.0025 −0.022 -
750 18.2 1.3 19.5 20.36 0.30 0.0025 −0.021 -
850 18.4 3.3 21.7 22.5 -
Thus, we can assume that there is re-distribution
(relaxation) of strains in the regions close to the
interface QWR – 2D layer. This relaxation of residual
strains, as a consequence of thermally-activated and
strain-enhanced processes of In/Ga atomic
interdiffusion, is a driven mechanism of structural
transformations caused by RTA of (In,Ga)As QWRs.
The samples under investigation showed good
coincidence between calculated and experimental data at
the level 2 – 5 % both for the position and intensities
over the whole RC. Analyzing the experimental data
obtained, we determined main structural parameters of
(In,Ga)As/GaAs structure.
The multilayer structure period, Λ, was determined
through angular positions of any two superlattice
satellites by using the relation:
nm
nm
θ−θ
λ−
=Λ
sinsin
2)( . (2)
where λ is the wavelength of X-ray radiation CuKα1
(λ = 1.54051 Å), m(n) are the orders of X-ray wave λ
reflections, θm(θn) are the reflection angles for these
orders.
Stemming from the angular position of zero satellite,
θ0, the average content of InAs, xav, in the period of the
multilayer structure can be determined using the
following relation:
( )0BrBr
GaAsInAs
GaAs
av cot
1
1
θ−θθ
ν+
ν−
−
=
aa
ax , (3)
where )А0584.6(А63375.5
о
InAs
о
GaAs == aa is the
lattice parameter of GaAs (InAs), ν = 0.333 is the
Poisson coefficient, θBr = 33.02о is the Bragg angle
inherent to the GaAs substrate. Having determined the
change of zero satellite angular position ( 0θΔ ) relatively
to the GaAs peak from experimental reflection spectra
and using the relation [20]:
ε⊥ = [sinθBr / sin(θBr − Δθ0)] − 1 (4)
we estimated the strain mean value (ε⊥) inside the layers
along the direction of the structure growth. The obtained
data are summarized in Table.
Note: dGaAs (dInGaAs) is the layer thickness for GaAs
(InGaAs), Λ⊥ (Λ⎥⎥ ) is the period of the structure along
the growth direction (lateral), хav is the average In
concentration determined from zero satellite position,
ε⊥(GaAs) (ε⊥(InGaAs)) is the strain along the structure
growth direction for GaAs (InGaAs) layer, ε⎥⎥ (InGaAs)
is the strain in the layer plane.
Shown in Fig. 5 are diffraction RCs of 004 reflection
for the initial (a) and annealled at Тann = 750 °С (b)
samples obtained in two mutually orthogonal azimuthal
directions of incident radiation: parallel (a) and
perpendicular (b) relatively to orientations of (In,Ga)As
QWRs. It is easy to seen that asymmetric broadening the
diffraction peaks observed in the initial sample (Fig. 5a)
is increased after RTA (Fig. 5b) and especially clear
pronounced with growing the reflection order. As
mentioned above, the main reasons for broadening these
peaks can be: planar roughness of interfaces, In gradient
distribution along the growth direction, mosaic character
of the film structure and presence of two vertical periods
in the multilayer structure. Roughness of interfaces is
not a dominant effect, as we observed experimentally the
change in peak angular positions [21], but this effect
contribution into broadening the reflection peaks grows
in the samples treated by RTA (Fig. 5b). Performed
modelling the RCs with taking into account the In
concentration gradient along the structure growth
direction, as it was made in [22], showed that the
thickness of layers containing In is too small to reach
respective asymmetry of experimental reflection peaks.
We suppose that the main and dominant effect providing
this asymmetrical broadening the peaks is the
dependence of peak angular positions on the
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 1. P. 36-45.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
44
QWRs lateral periodicity. The latter results in decreasing
the diffracted scattering intensity to a level lower than
the sensitivity of our experimental facility. Also
interesting is the fact that, with increasing the RTA
temperature, the lateral period grows up to 106.5 nm
(Тann = 600 °C). It is a direct evidence of running
thermally-stimulated processes of the lateral mass
transfer in the form of In/Ga atomic interdiffusion.
5. Conclusions
HRXRD data obtained for symmetrical and
asymmetrical reflections in two mutually orthogonal
directions of incident radiation (parallel and
perpendicular to QWRs orientation direction) enabled to
reveal anisotropy of elastic strain distribution in QWRs
structure. It has been shown that, at the temperatures
Тann ≤ 750 °С, the driven mechanism of structural
transformations is relaxation of residual strains as a
consequence of thermally-activated and strain-enhanced
processes of In/Ga atomic interdiffusion at the interface
QWR – 2D layer, which does not result in a
considerable change of In concentration in (In,Ga)As
QWRs. The presence of two superlattice vertical periods
and their changes after RTA in the samples under study
are explained using the data about elastic strain
anisotropic distribution and reduction in the structure
symmetry. Also shown is that the increase in the lateral
period of (In,Ga)As QWRs after RTA is caused by the
processes of anisotropic strain-enhanced In/Ga atomic
interdiffusion.
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