The effect of isovalent substitutions and dopants of 3d-metals on the properties of ferroelectricssemiconductors
Electrophysical properties and microstructure of PTCR ceramics of the system (Ba,Ca,Sr,Y)TiO3 + y%Mn have been investigated. It has been shown that manganese ions increase the potential barrier at grain boundaries and form a high-resistance outer layer in (Ba,Ca,Sr,Y)TiO₃ ceramics. The resistance...
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| Datum: | 2003 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
2003
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| Schriftenreihe: | Condensed Matter Physics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/120701 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The effect of isovalent substitutions and dopants of 3d-metals on the properties of ferroelectricssemiconductors / O.I. V'yunov, L.L. Kovalenko, A.G. Belous // Condensed Matter Physics. — 2003. — Т. 6, № 2(34). — С. 213-220. — Бібліогр.: 14 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Electrophysical properties and microstructure of PTCR ceramics of the system
(Ba,Ca,Sr,Y)TiO3 + y%Mn have been investigated. It has been shown
that manganese ions increase the potential barrier at grain boundaries and
form a high-resistance outer layer in (Ba,Ca,Sr,Y)TiO₃ ceramics. The resistance
of grains, outer layers and grain boundaries, the values of temperature
coefficient of resistance as well as the varistor effect as a function of
manganese content of PTCR materials have been investigated. |
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