Temperature changes in the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs
Adduced in this paper are the method and results of theoretical studying the effects of spatial confinement and exciton-phonon interaction on the position and shape of the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs. The heterojunction has been considered as unstrai...
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| Datum: | 2015 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/120721 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Temperature changes in the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs / D.V. Kondryuk, A.V. Derevyanchuk, V.M. Kramar, A.A. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 128-133. — Бібліогр.: 33 назв. — англ. |