Electron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN
High-field electron transport has been studied in crossed electric and magnetic fields in bulk GaN with doping of 10¹⁶ cm⁻³ and compensation around 90% at the low lattice temperature (30 K). The electron distribution function, the field dependences of the ohmic and Hall components of the drift veloc...
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| Datum: | 2015 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/120729 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN / G.I. Syngayivska, V.V. Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 79-85. — Бібліогр.: 28 назв. — англ. |