Characterization of ZnSe nanocrystals grown by vapor phase epitaxy
This paper reports the application of scanning electron microscopy, x-ray diffraction, and photoluminescence techniques for characterization of ZnSe nanocrystals grown on GaAs (100) substrate from the vapor phase. The applied characterization techniques show the evidence for coexistence of two se...
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| Datum: | 2006 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2006
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| Schriftenreihe: | Физика низких температур |
| Schlagworte: | |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/120867 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Characterization of ZnSe nanocrystals grown by vapor phase epitaxy / V.V. Tishchenko, A.V. Kovalenko // Физика низких температур. — 2006. — Т. 32, № 12. — С. 1545–1550. — Бібліогр.: 21 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | This paper reports the application of scanning electron microscopy, x-ray diffraction, and
photoluminescence techniques for characterization of ZnSe nanocrystals grown on GaAs (100) substrate
from the vapor phase. The applied characterization techniques show the evidence for coexistence
of two sets of nanocrystals with rather different characteristic sizes. In addition, the lowest
energy levels of spherically shaped nanocrystals are calculated in the framework of the effective-mass
approximation and compared with photoluminescence data. |
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