Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method
This paper presents the results of AFM, Raman, IR spectroscopy and ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the type and temperature of substrates, as well as the evaporation rate on film morphology, composition and optical properties are studied. The evap...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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irk-123456789-1209662017-06-14T03:03:50Z Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method Semikina, T.V. This paper presents the results of AFM, Raman, IR spectroscopy and ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the type and temperature of substrates, as well as the evaporation rate on film morphology, composition and optical properties are studied. The evaporation rate increase allows to enhance the growth of films on p-Si up to 0.1 μm/min. The obtained α-Si:Y films possess an amorphous structure with a small amount of nanocrystalline inclusions. The formation of nanocrystalline inclusions could be generated by SiHх, peaks of which are clearly pronounced at 650, 890 and 2125 сm⁻¹ in the IR spectrum or yttrium impurities. The ellipsometry results show that α-Si:Y films have the high absorption coefficient, refraction index is 3.4 at the wavelength λ = 620 nm. The optical bandgap drops from 2.0 to 1.17 eV when the substrate temperature increases (140 to 300 °С). 2005 Article Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method / T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 19-24. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 68.55.-a, 78.66.-w http://dspace.nbuv.gov.ua/handle/123456789/120966 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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This paper presents the results of AFM, Raman, IR spectroscopy and ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the type and temperature of substrates, as well as the evaporation rate on film morphology, composition and optical properties are studied. The evaporation rate increase allows to enhance the growth of films on p-Si up to 0.1 μm/min. The obtained α-Si:Y films possess an amorphous structure with a small amount of nanocrystalline inclusions. The formation of nanocrystalline inclusions could be generated by SiHх, peaks of which are clearly pronounced at 650, 890 and 2125 сm⁻¹ in the IR spectrum or yttrium impurities. The ellipsometry results show that α-Si:Y films have the high absorption coefficient, refraction index is 3.4 at the wavelength λ = 620 nm. The optical bandgap drops from 2.0 to 1.17 eV when the substrate temperature increases (140 to 300 °С). |
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Semikina, T.V. |
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Semikina, T.V. Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Semikina, T.V. |
| author_sort |
Semikina, T.V. |
| title |
Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method |
| title_short |
Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method |
| title_full |
Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method |
| title_fullStr |
Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method |
| title_full_unstemmed |
Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method |
| title_sort |
morphology and optical properties of α-si:y films, obtained by electron-beam evaporation method |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2005 |
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http://dspace.nbuv.gov.ua/handle/123456789/120966 |
| citation_txt |
Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method / T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 19-24. — Бібліогр.: 16 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT semikinatv morphologyandopticalpropertiesofasiyfilmsobtainedbyelectronbeamevaporationmethod |
| first_indexed |
2025-07-08T18:56:28Z |
| last_indexed |
2025-07-08T18:56:28Z |
| _version_ |
1837106190144765952 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 3. P. 19-24.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
19
PACS 68.55.-a, 78.66.-w
Morphology and optical properties of α-Si:Y films
obtained by the electron-beam evaporation method
T.V. Semikina
Department of Environmental & Material Engineering,
Teikyo University of Science & Technology,
2525 Yatsusawa, Uenohara-machi, Kitatsuru-gun,
Yamanashi-pref., 409-0193 Japan
E-mail: semikina@edd.ntu-kpi.kiev.ua, tanyasemikina@rambler.ru
Abstract. This paper presents the results of AFM, Raman, IR spectroscopy and
ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the
type and temperature of substrates, as well as the evaporation rate on film morphology,
composition and optical properties are studied. The evaporation rate increase allows to
enhance the growth of films on p-Si up to 0.1 μm/min. The obtained α-Si:Y films possess
an amorphous structure with a small amount of nanocrystalline inclusions. The formation
of nanocrystalline inclusions could be generated by SiHх, peaks of which are clearly
pronounced at 650, 890 and 2125 сm−1 in the IR spectrum or yttrium impurities. The
ellipsometry results show that α-Si:Y films have the high absorption coefficient,
refraction index is 3.4 at the wavelength λ = 620 nm. The optical bandgap drops from 2.0
to 1.17 eV when the substrate temperature increases (140 to 300 °С).
Keywords: α-Si:Y amorphous film, electron-beam evaporation, IR and Raman
spectroscopy, optical properties.
Manuscript received 10.06.05; accepted for publication 25.10.05.
1. Introduction
The films based on amorphous silicon are under research
attention for more than 20 years. In comparison with
another semiconductors, this interest is stimulated by the
fact that α-Si has such inspiring properties as high
photoconductivity, high absorption coefficient and
ability of effective doping [1, 2]. Nowadays, the
hydrogenated amorphous silicon films α-Si:Н are used
as an active layer in thin film transistors of switching
network in liquid crystal displays. Solar cells applied in
calculators are also covered with α-Si:Н film. These
films are used in color sensors [3]. However, the α-Si:Н
photoelectrical properties degrade under illumination,
which is known as the Staebler-Wronsky effect [2]. As a
result, the efficiency of solar cells with α-Si:Н film
drops from 10 % to less than 8 % after long illumination
duration. That is why there are several actual tasks: to
reduce film degradation in the course of illumination, to
decrease the amount of photoinduced recombination
centers and increase the carrier charge mobility. There
are various methods to resolve the mentioned tasks. For
example, the solar cells covered with α-Si:Н layer of
0.1 μm thickness do not demonstrate the photoelectrical
properties degradation under illumination process.
However, their efficiency was considerably less (4 %)
because of decreased sun radiation absorption [3].
Recently, the more perspective direction became
deposition of α-Si:Н films containing inclusions of
silicon nanocrystalline phase (nc-Si) in amorphous
matrix. The encouraging feature of this material is based
on higher photosensivity and electrical characteristics
stability of α-Si〈nc-Si〉 films as compared to homo-
genous amorphous films [2, 4]. At the same time,
α-Si〈nc-Si〉 films are interesting objects of investigation
in the field of semiconductor thin film physics. It is
known that amorphous films with micro- and
nanocrystalline composition have bigger defect density
in comparison with homogenous films, which should
lead to a decrease in photoconductivity [5]. However, in
practice the α-Si〈nc-Si〉 film photoconductivity is higher
by an order of magnitude than that of amorphous silicon
films [6]. There is no commonly adopted explanation of
this fact [6, 7].
In this work, the issue of high film photosensitivity
and stability of their electrical characteristics is resolved
by development of deposition technology for amorphous
silicon films with yttrium addition α-Si:Y. This new
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 3. P. 19-24.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
20
a) b)
Fig. 1. Optical images of α-Si films with yttrium: 1-2 (a), 1-3 (b).
Fig. 2. AFM image of α-Si:Y film (sample 1-2).
elaboration is based on the idea to exclude hydrogen
from the technological process. As known [2], hydrogen
escape from film composition is the main reason of
instability in photoelectrical characteristics. The
amorphous silicon-yttrium films presented in this paper
are unique new objects that don’t have analogs in world
research. In our previous investigations [8, 9] of α-Si:Y
films photoelectrical characteristics and photosensitivity,
the optimal concentration of yttrium 10±2 % was
chosen. At this concentration, the dark conductivity had
its minimum and was equal σmin = 10–11 Ω–1cm–1, and
photoconductivity at the wavelength λ = 0.1 μm reached
its maximal value σphotocond = 10–5 Ω–1cm–1. Moreover, at
film exposition during 2000 hours the photoelectrical
characteristic degradation was only 4–5 %. The first
preliminary explanation of this great result was based on
the assumptions that yttrium creates the photoactive cen-
ters that are responsible for high film photosensitivity,
while the absence of hydrogen in the film structure
provides the high characteristics stability. To elucidate
the issues of the film composition and morphology,
determination of such important characteristics as
absorption value and optical width of the bandgap, the
measurements by using optical and atomic force
microscopy, ellipsometry, infrared and Raman spectro-
scopy were done.
2. Technology of deposition
Thin amorphous silicon-yttrium films were obtained by
electron-beam evaporation of specially prepared alloys
by using UVN-74P3 equipment with electron-beam
evaporator of IL-5 type.
Crushed powder of monocrystalline silicon with
yttrium where yttrium consists 10 % relatively to silicon
were put into a water-cooled crucible of electron-beam
evaporator. To get the homogenous target composition,
powders were alloyed in a chamber under vacuum
5·10−6 Torr. The target evaporation was carried out for
7–8 min onto the n- and p-type Si substrates. The
evaporation rate was varied via changing of the beam
evaporator emission current. All the technological
conditions are summarized in Table.
The influence of the substrate conductivity type on
the film properties, optimal substrate temperature and
evaporation rate were studied in this work.
2.1. Results of optical and atomic force microscopy
From α-Si:Y films images obtained using the optical
microscope (Fig. 1), it is seen that films have an
amorphous structure. These images are very close to the
results of electron microscopy of amorphous α-Si:Н
films with small number of nanocrystalline inclusions
that were prepared by the chemical vapor deposition
method [7]. Both in the work [7] and in presented
images, one can see dark points. These points can be
interpreted as the film defects or graphite inclusions. The
images obtained using atomic force microscopy (AFM)
gives more detailed information of surface film
morphology (Fig. 2). There are some separate staying
“needles” or “hills” on the film surface. This result
seems to be very interesting because allows to assume
that investigated films have nanocrystalline inclusions in
their structure, which can be responsible for observed
unique photoelectrical properties mentioned above.
3. Raman spectroscopy results
Raman spectroscopy is a sensitive instrument providing
considerable information of the material structure based
on α-Si. In amorphous silicon, all phonons modes are
active: longitudinal and transverse acoustic (LA, TA), as
well as longitudinal and transverse optical ones (LO,
TO) [10, 11]. Thus, a comparative analyze of α-Si based
material Raman spectrum allows to discover some small
changes in the short-range order. Raman spectra were
measured at the wavelength 647.1 nm in non-polarized
light using the Kr+ Innova-300 laser. The reached
resolution was 2.5 сm−1, illumination power – 15 mW.
It is seen from the Raman spectrum (Fig. 3) that α-Si:Y
film is amorphous, because of the presence of a wide
peak generated by TO mode within the range 200 –
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 3. P. 19-24.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
21
Fig. 3. Raman spectra of α-Si:Y film (sample 2-4).
Table. Parameters of technological regimes.
N sample Target content Substrate type Substrate temperature,
°С
Evaporator voltage,
kV
Emission
current, mА
1-1 α-Si +10 %Y N 140 12 75
1-2 α-Si +10 %Y N 140 12 100
1-3 α-Si +10 %Y N 190 12 75
1-4 α-Si +10 %Y N 190 12 100
1-5 α-Si +10 %Y N 300 12 75
2-1 α-Si +10 %Y P 140 12 75
2-2 α-Si +10 %Y P 140 12 100
2-3 α-Si +10 %Y P 190 12 75
2-4 α-Si +10 %Y P 190 12 100
2-5 α-Si +10 %Y P 300 12 75
2-6 α-Si +10 %Y P 300 12 100
400 cm−1 with the full width of half maximum (FWHM)
100 cm−1. As this peak is not centered in the range of
480 cm−1 and its FWHM is larger than 70 cm−1, the
structural perfection of the studied film is not suitable
for device application [11]. It is known that
nanocrystalline inclusions contribute to Raman spectrum
a single sharp peak of TO mode with FWHM close to
4 cm−1 at the frequency of 520 cm−1 [11, 12]. However,
this peak can not be observed at the grain size ~3 nm, or
at the small nanocrystallite concentration. It could be
also shifted to the frequency of 512 cm−1. ТО modes of
grain boundaries create a peak centered near
500±10 cm−1 [11]. Concerning the mentioned above
information all the Raman spectra for all types of α-Si:Y
samples have the contribution from grain boundaries
(small peak near 500±10 cm−1) and high structural
defectiveness. The weakly pronounced peak in the range
512 cm−1 can be identified as a small amount of
nanocrystalline inclusions in the film. The most
intensive peak in the range ~120 cm−1 is a response from
the silicon substrate.
3.2. Infrared spectroscopy
The infrared (IR) spectroscopy measurements were
carried out in the reflection regime at light incidence
angle of 20° using a Bruker IFS 66 Fourier Transform
Infrared Spectrometer.
Generally, IR spectra of α-Si:H consist of three
absorption regions: at 630 cm−1 related to the SiH wag
mode, a doublet at 850, 890 cm−1 probably related to
SiH2 bending modes, and the peaks at 2000 – 2090 cm−1
related to SiH stretching modes [13]. In the obtained α-
Si:Y spectra (Fig. 4), there are the following modes:
Si-Hx wagging mode at 650 cm−1 that is a typical
characteristics [14] of hydrogen bonded to silicon; C at
790 cm−1; Si-Hx bending scissors [14] mode at 890 cm−1;
SiO at 1120 cm−1; a stretching mode of mono- and
dihydrides [14] SiH, SiH2 at 2125 cm−1; SiHN at
2250 cm−1; SiC-NH at 2800 – 3000 cm−1; SiO-H
stretching at 3760 cm−1 and SiH, SiH2, SiF at 6000 cm−1.
The peak at the frequency 2030 cm−1 assigned to silicon-
hydrogen clusters and known as platelet-like SiH group
[5] is not observed. A peak containing information of
yttrium presence in the film is not also identified. The α-
Si:Y films obtained at different technological regimes
have the similar composition of vibration modes. But the
intensity of peaks characterizing the mode concentration
differs. IR spectrum peaks of films on n-Si indicate a
bigger concentration of modes. As seen from IR spectra
(Fig. 4), the type of substrates has a big influence on the
structure of growing films. Thus, when deposing on the
p-type substrate we observed the bigger growth rate
(~0.1 μm/min) and obtained the films with thicknesses
609, 658 and 735 nm (samples 2-2, 2-4 and 2-1,
accordingly). The film thickness is determined from the
interference fringes. At the same time, the
inconsiderable growth rate and small thickness ~100 –
200 nm were obtained for n-Si substrates. It is possible
to say that morphology and surface energy distribution
of p-Si surface provides the better conditions for
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 3. P. 19-24.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
22
Fig. 4. The IR characteristics of samples deposited on n-Si (a)
and p-Si (b).
Fig. 5. Extinction coefficient κ and refraction index n of
samples 1-1 and 2-1.
nucleation and growth of α-Si:Y films. The correlation
between IR spectroscopy results and substrate
temperature was not observed.
Thus, though the film deposition takes place in the
process without H2, the films contain hydrogen in their
composition. IR spectra have the peaks of the SiH2
complex that is known to play the main role in the
nanocrystallization process [3]. Consequently, in our
case, hydrogen also could create the centers stimulating
crystallization in the course of growing the film. The
bigger intensity of the peaks at the frequency 2125 cm−1
in the films deposited on n-Si specifies on the larger
number of nanocrystalline inclusions. Therefore, the
increased photosensitivity and degradation stability of
our films has the ambiguous explanation. First variant is
that yttrium creates the impurities levels increasing
photosensitivity. Next reason is that nanocrystalline
inclusions remove in part the mechanical stresses in
amorphous matrix [7]. Thus, the less strained amorphous
network with a lower concentration of weak bonds is
formed. The obtained structure has less degradation
under the illumination. But it is not clear what stimulates
the nanocrystallization. The nanocrystalline inclusions
could be formed either yttrium presence or due to SiH2
complexes.
4. Ellipsometric results
The optical constant measurements were performed
using a spectro-ellipsometer VASE. The ellipsometric
angles Ψ and Δ were determined within the spectral
range from 0.8 to 5.0 eV at the angles of incidence 65,
70 and 75о.
It was obtained that such important characteristic as
the optical absorption is bigger for the α-Si:Y films
deposited on n-Si substrates in comparison with that of
p-Si (Fig. 5). It correlates with IR spectroscopy results
and confirms that films on n-Si have a higher
concentration of various complexes forming impurity
levels in the bandgap and resulting in increased
absorption. The extinction coefficient κ of α-Si:Y is less
than the maximum value inherent to amorphous silicon
κ = 3.0 obtained from the reference database. The
refraction coefficient n changes within the range 3.4–1.7
under incident light frequencies 20000 – 37500 cm−1,
which are also lower than values of amorphous silicon
4.5–2.05. These considerable changes of the refraction
index is a disadvantage from the viewpoint of film
application in solar cells and concede the refraction
index stability reported in works [12, 15, 16]. However,
the obtained value n = 3.4 (λ = 620 nm) is close to the
values n = 3.7 (λ = 600 nm) demonstrated for α-Si:H
films deposited by the chemical vapor deposition
method [15] and the value n = 3.57 (λ = 700 nm) for α-
Si:H prepared by the glow discharge decomposition of
the ammonia/silane gas mixture [16]. We obtained that
the substrate temperature Tsub and evaporation rate
(emission current value) doesn’t influence appreciably
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 3. P. 19-24.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
23
Fig. 6. Optical bandgap dependence on the substrate tempe-
rature for films deposited on p-Si.
on the refraction index. However, under the increasing
substrate temperature, the optical bandgap width
calculated in accord with the Tauc equation from the
absorption coefficient dependence on the incident energy
drops exponentially (Fig. 6). The value Eopt = 1.51 eV
drops to value 1.17 eV under changing the substrate
temperature from 190 to 300 °C. In work [15], it was
obtained that samples α-Si:H prepared at the substrate
temperature 300 °C possess Eopt = 1.55 eV that drops to
1.17 eV after annealing at 500 °C. A.V. Nejdanov et al.
explain the optical bandgap decrease after annealing by
the fact of film structural disordering. Though, in
principle, the annealing should lead to defect
concentration reduction and increase of the bandgap
width. Originally, on the base of work [3] we assumed
that α-Si:Y films deposited under substrate temperature
300 °C would have the minimal number of defects.
Thus, the films α-Si:Н deposited at Тsub= 120 °С have
the defect density of 1019 cm−3, and films deposited at
Тsub = 250 °С have 1015 cm−3 [3]. Undoubtedly that the
substrate temperature considerably influence on the
structure of growing films and consequently on the films
optical characteristics. Possibly, under the substrate
temperature increase the film structural disordering
occurs. Another explanation that in the case of higher
temperatures the bigger amount of impurity levels in the
bandgap forms. In work [1], the bandgap width decrease
is explained by increasing of the nanocrystalline phase
part. This idea is confirmed by our results. Thus, the
sample 1-1 possessing the most intensive SiH2 peak in
the IR spectrum has the optical bandgap width 1.75 eV
that is higher than values of all another samples with less
intense SiH2 peaks. There is also remarkable influence of
the evaporation rate on the Eopt value. As a rule, the
growth rate increase is a desirable effect for thin film
deposition because of economical reasons in their further
application. Moreover, it is known [3] that the defect
density in the growing film could be decreased in the
case when the growth rate is higher than the rate of
hydrogen motion in the substrate and hydrogen-leaving
rate from the growing film. However, in our case it is
obvious (Fig. 6) that with an increase in emission current
and, consequently, in the growth rate, the optical
bandgap width decreases and the forming film is more
structurally disordered.
5. Conclusions
As a result of investigation, it is obtained that α-Si:Y
films deposited by electron-beam evaporation have the
amorphous structure with small amount of
nanocrystalline inclusions that was demonstrated by
AFM. Instead of the fact that the hydrogen is absent in
the course of the deposition process, the α-Si:Y films
possesses the SiH2 phase in its composition, which could
be crystallization centers during the growth. Under the
increase of the substrate temperature to 300 °C, the
optical bandgap width drops from 2.0 to 1.17 eV. It is
assumed that at the temperature 300 °C the structure of
the growing film is more disordered.
Because of the small concentration of nanocrystalline
inclusions demonstrated by the weakly pronounced peak
~512 cm−1 in the Raman spectrum, nanocrystallites
could not considerably influence on the change of Eopt.
The obtained coefficients of extinction κ and refraction
index n = 3.2 – 3.4 inherent to α-Si:Y films are less than
those of pure α-Si. The emission current increase enables
to increase the growth rate of α-Si:Y films deposited on
the p-type substrate to ~0.1 μm/min. However, the
increase of the growth rate also leads to bigger film
structural disordering. Being based on the fact that the
photosensitivity and stability of electrical characteristics
of α-Si:Y films is very high and the films themselves are
absolutely new investigated object, we consider that
determination of yttrium impact on the film composition
and answer on the question what is responsible for the
increase in photosensitivity are perspective directions for
future investigations.
Acknowledgement
The author would like to thank to Dr. A. N. Smyryeva
and M. G. Dusheyko (NTUU “KPI”, Kiev, Ukraine) for
sample preparation, to Prof. V.G. Litovchenko (Institute
of Semiconductor Physics, Kiev, Ukraine) for assistance
in interpretation of the IR spectra, M. Rommel (TU
Erlangen-Nurenberg, Germany) for AFM measurements,
Prof. D. Zahn and Dr. M. Friedrich (TU Chemnitz,
Germany) for their help in simulation of calculations
after ellipsometric measurements.
References
1. V.P. Afanas'ev, A.S. Gudovskikh, O.I. Kon'kov,
M.M. Kazanin, K.V. Kougiya, A.P. Sazanov,
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005. V. 8, N 3. P. 19-24.
© 2005, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
24
I.N. Trapeznikova, and E.I. Terukov // Semicon-
ductors 34(4), p. 477-480 (2000).
2. M.A. Green, Crystalline and thin-film silicon solar
cells: state of the art and future potential // J. Solar
Energy, 74(3), p. 181-192 (2003).
3. A. Matsuda, Thin film silicon growth process and
solar cell application // Jpn J. Appl. Phys. 43(12),
p. 7909-7920 (2004).
4. V.P. Afanas'ev, A.S. Gudovskikh, V.N. Nevedoms-
ki, A.P. Sazanov, A.A. Sitnikova, I.N. Trapezniko-
va, and E.I. Terukov, Effect of thermal treatment on
structure and properties of a-Si:H films obtained by
cyclic deposition // Semiconductors 36(2), p. 230-
234 (2002).
5. O.A. Golikova and M.M. Kazanin, Special features
of photoelectric properties of nanostructured films
of hydrogenated silicon // Semiconductors 35(10),
p. 1187-1190 (2001).
6. O.A. Golikova, Photoconductivity of nanostructured
hydrogenated silicon films // Semiconductors 36(6),
p. 691-694 (2002).
7. V.P. Afanasiev, A.S. Gudovskikh, A.Z. Kazak-
Kazakevich, A.P. Sazanov, I.N. Trapeznikova, and
E.I. Terukov, TEM study of the formation and
modification of nanocrystalline Si inclusions in a-
Si:H films // Semiconductors 38(2), p. 221-224
(2004).
8. A.N. Shmyryeva, T.V. Semikina, M.G. Dushejko,
N. Bishena, Thin films of silicon-yttrium alloys //
Book of Abstracts. Russian Symposium of Amor-
phous and Single Crystal Semiconductor, May-June,
St-Petersburg, p. 144 (1998) (in Russian).
9. A.N. Shmyryeva, T.V. Semikina, M.G. Dushejko,
Thin films of amorphous silicon-yttrium alloys //
Book of Abstracts of Second Russian Conference
(“Silicon-2000”), Moscow, February 9-11, 2000, p.
374-376 (in Russian).
10. J.E. Gerbi, P.M. Voyles, M.M.J. Treacy, J.M. Gib-
son, J.R. Abelson, Increasing medium-range order
in amorphous silicon with low-energy ion
bombardment // J. Appl. Phys. Lett. 82(21), p. 3665-
3667 (2003).
11. Daxing Han, J.D. Lorentzen, J. Weinberg-Wolf,
L.E. McNeil, Qi Wang, Raman study of thin films
of amorphous to microcrystalline silicon prepared
by hot-wire chemical-vapor deposition // J. Appl.
Phys. 94(5), p. 2930-2936 (2003).
12. O.A. Golikova and M.M. Kazanin, Effect of nano-
crystalline inclusions on the photosensitivity of
amorphous hydrogenated silicon films //
Semiconductors 34 (6), p. 737-740 (2000).
13. Daxing Han, Keda Wang, Jessica M. Owens, Lynn
Gedvilas, Brent Nelson, Hotoe Habuchi, Masako
Tanaka, Hydrogen structures and the optoelectronic
properties in transition films from amorphous to
microcrystalline silicon prepared by hot-wire
chemical vapor deposition // J. Appl. Phys. 93(7),
p. 3776-3783 (2003).
14. A.H.M. Smets, W.M.M. Kessels, M.C.M. van de
Sanden, Vacancies and voids in hydrogenated
amorphous silicon // J. Appl. Phys. Lett. 82(10),
p. 1547-1549 (2003).
15. A.V. Nezhdanov, A.I. Mashin, A.F. Khokhlov,
V.G. Shengurov, A.K. Yezhov Optical properties of
structural heterogeneous silicon // Abstract book of
IV International Conference on Amorphous and
Microcrystalline Semiconductors, 5-7 July, St.
Petersburg, Russia (2004) (in Russian).
16. Ilker Ay, Husein Tolukay, Optical transmission
measurements on glow-discharge amorphous-silicon
nitride films // Turk. J. Phys. 25, p. 215-222 (2001).
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