Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method
This paper presents the results of AFM, Raman, IR spectroscopy and ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the type and temperature of substrates, as well as the evaporation rate on film morphology, composition and optical properties are studied. The evap...
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| Datum: | 2005 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/120966 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method / T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 19-24. — Бібліогр.: 16 назв. — англ. |