Physico-Chemical model and computer simulations of silicon nanowire growth
A model of catalytically enhanced CVD growth of a silicon nanowire assembly on a substrate is developed, and growth process is simulated. Thermodynamic-kinetic theory is used for modeling of molecular transport in the gas phase, processes near catalyst surface and nanowire side of variable curvature...
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| Datum: | 2005 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/120978 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Physico-Chemical model and computer simulations of silicon nanowire growth / A. Efremov, A. Klimovskaya, T. Kamins, B. Shanina, K. Grygoryev, S. Lukyanets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 1-11. — Бібліогр.: 37 назв. — англ. |