Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor

Electronic band structure of the diluted magnetic semiconductor Cd₁₋x Mn x Te [100] ideal surface is calculated by the semiempirical tight- binding method in the framework of sps*-model. Surface bands, emerging above the bulk band structure, as well as their type, energy position and...

Full description

Saved in:
Bibliographic Details
Date:2000
Main Authors: Melnichuk, S.V., Mikhailevsky, Y.M., Rarenko, I.M., Yurijchuk, I.M.
Format: Article
Language:English
Published: Інститут фізики конденсованих систем НАН України 2000
Series:Condensed Matter Physics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/120985
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor / S.V. Melnichuk, Y.M. Mikhailevsky, I.M. Rarenko, I.M. Yurijchuk // Condensed Matter Physics. — 2000. — Т. 3, № 4(24). — С. 799-806. — Бібліогр.: 12 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Description
Summary:Electronic band structure of the diluted magnetic semiconductor Cd₁₋x Mn x Te [100] ideal surface is calculated by the semiempirical tight- binding method in the framework of sps*-model. Surface bands, emerging above the bulk band structure, as well as their type, energy position and localization near the parting border with vacuum are investigated. It is shown that Mn 3d-states as well as sp-states play appreciable role in the formation of surface bands. The peculiarities of surface band structure are analyzed in the dependence of solid solution composition.