Filling of electronic states and crystal lattice deformation around dislocation wall
Within the band model we study the electron redistribution around the dislocation wall depending on the conduction band filling ( 0 < n < 1 ) taking into account the electron-deformation coupling. We show that as the conduction band filling n increases, the redistribution gets more localized a...
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| Datum: | 2000 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
2000
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| Schriftenreihe: | Condensed Matter Physics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121045 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Filling of electronic states and crystal lattice deformation around dislocation wall / R.M. Peleschak // Condensed Matter Physics. — 2000. — Т. 3, № 1(21). — С. 169-174. — Бібліогр.: 7 назв. — англ. |