Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufacture...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
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irk-123456789-1211222017-06-14T03:03:47Z Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector Bravina, S.L. Cattan, E. Morozovsky, N.V. Remiens, D. The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufactured by R.F. magnetron sputtering. Top Pt electrodes in a shape of isosceles rectangular triangle together make the quadrant-diagonal system. The results of pyroelectric undersurface probing and “along surface” pyroelectric scanning show that the investigated quadrant-diagonal system of SE makes it possible to examine all main types of differential position-sensitive PDR. The experimental results for investigated 2-element single-coordinate PDR variants are in a good agreement with calculations for the corresponding systems. 2002 Article Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector / S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 89-94. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 78.20.-e http://dspace.nbuv.gov.ua/handle/123456789/121122 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufactured by R.F. magnetron sputtering. Top Pt electrodes in a shape of isosceles rectangular triangle together make the quadrant-diagonal system. The results of pyroelectric undersurface probing and “along surface” pyroelectric scanning show that the investigated quadrant-diagonal system of SE makes it possible to examine all main types of differential position-sensitive PDR. The experimental results for investigated 2-element single-coordinate PDR variants are in a good agreement with calculations for the corresponding systems. |
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Bravina, S.L. Cattan, E. Morozovsky, N.V. Remiens, D. |
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Bravina, S.L. Cattan, E. Morozovsky, N.V. Remiens, D. Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Bravina, S.L. Cattan, E. Morozovsky, N.V. Remiens, D. |
| author_sort |
Bravina, S.L. |
| title |
Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector |
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Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector |
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Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector |
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Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector |
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Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector |
| title_sort |
thin film pzt-si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2002 |
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http://dspace.nbuv.gov.ua/handle/123456789/121122 |
| citation_txt |
Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector / S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 89-94. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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2025-07-08T19:13:42Z |
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89© 2002, Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 1. P. 89-94.
PACS: 78.20.-e
Thin film PZT-Si structure with quadrant-diagonal
electrode system as an element
of position sensitivepyroelectric detector
S.L. Bravina1), E. Cattan2), N.V. Morozovsky1), D. Remiens2)
1) Institute of Physics, NAS of Ukraine, 46 prospect Nauki, 03028 Kyiv, Ukraine
e-mail: bravina@iop.kiev.ua
2) LAMAC-dept. MIMM, Universite de Valenciennes et du Hainaut-Cambresis, CRITT-Z.I. Champ de l�Abbesse, 59600 Maubeuge, France
e-mail: eric.cattan@univ.valenciennes.fr
Abstract. The main characteristics of position sensitive systems of pyroelectric detectors of
radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated
by photopyromodulation method. Pt-PZT-Pt/Ti-SiO2/Si structures with 1.9 µm (111)-oriented
PZT (54/46) layer were manufactured by R.F. magnetron sputtering. Top Pt electrodes in a
shape of isosceles rectangular triangle together make the quadrant-diagonal system. The re-
sults of pyroelectric undersurface probing and �along surface� pyroelectric scanning show
that the investigated quadrant-diagonal system of SE makes it possible to examine all main
types of differential position-sensitive PDR. The experimental results for investigated 2-
element single-coordinate PDR variants are in a good agreement with calculations for the
corresponding systems.
Keywords: PZT-ceramic films, quadrant-diagonal electrode system, position-sensitivity,
pyroelectric detectors, photopyromodulation method.
Paper received 10.12.01; revised manuscript received 08.02.02; accepted for publication 05.03.02.
1. Introduction
Since the first application of ceramics of PZT type for
pyroelectric detectors of radiation (PDR) [1] the transi-
tion from volume to thin layer configurations of sensitive
elements (SE) of PDR came over [2]. At the same time
took place the transition from single element PDR and
their 2- and 4- element and matrix assembling to 1x2 and
2x2 chips and multi-element systems based on thin films
of PZT on Si-substrate. Progress in this direction was
stimulated by needs of thermal field monitoring and de-
sign of IR-spectroscopic systems and systems of IR-ori-
entation. For systems of controlling the spatial position
of IR-laser beams and systems of IR-orientation were
developed position sensitive PDR [3] whose output sig-
nal depends on the position (coordinate) of the
energetic centre of radiation beam cross-section relative
to the zero point of the PDR.
For more than 40 year term of using ceramics of PZT
type proved itself as one of the best for creating stable
polar-active materials resistant to thermal impacts and
repolarized in a relatively easy way [4]. At present PZT-
ceramics are considered as one of the most suitable mate-
rial for SE of position sensitive PDR. It is connected both
with variety of new methods of manufacturing effective
pyroactive PZT films on Si-substrate and ease of match-
ing miniature SE of PDR with silicone field effect transis-
tor (Si-FET).
In current literature on characteristics of PDR maxi-
mal attention is given to single- and multi- element PDR
of usual type and the information about position-sensi-
tive PDR is extremely limited.
90 SQO, 5(1), 2002
S.L. Bravina et al.: Thin film PZT-Si structure with quadrant-diagonal electrode system...
In this paper we present the results of investigation of
the main characteristics of position-sensitive systems of
PDR with SE based on PZT film on Si-substrate.
a ) b ) c )
Fig. 1. Schematic view of:
(a) - quadrant-diagonal electrode system of position sensitive
pyroelectric element;
(b) � side-to-side configuration of SE electrode system;
(c) - diagonal configuration of SE electrode system;
(d) � top-to-top triangle configuration of SE electrode system
2. Experimental
Pt-PZT-Pt/Ti-SiO2/Si structures with 1.9 µm (111)-
oriented PZT (54/46) layer were manufactured by R.F.
magnetron sputtering. Top Pt- electrodes (deposited by
sputtering followed by a lift-off) in a shape of isosceles
rectangular triangles together make the quadrant-diago-
nal system (Fig. 1a). The area of each triangle is ≈1 mm2;
the common dimensions of electrode system are near 4x4
mm. Each irradiated element has current-carrying thin
stripe with circle current electrode of ≈ 1 mm diameter.
Experiments were performed on the different pairs of
SE of quadrant-diagonal system of PDR (see Fig. 1a).
The investigated configuration of SE makes it possible to
examine all main types of differential position-sensitive
PDR. By means of paired combinations can be realized
2-element single-coordinate PDR variants and by means
of two-paired combinations are realized quadrant 4-ele-
ment two-coordinate position sensitive PDR variants, for
example �h-g�, �h-k�, �f-k� combinations.
The measurements of electrical capacitance Cs and
electrical conductance Gs of all the triangle elements of
investigated system at 1 kHz showed that Cs ≈ 5 nF, Gs ≈
0,5 µS with the deviation ≤ 10% for each of the elements
�e-�-k�.
Measurements of the pyroelectric response were per-
formed with the measuring set described in Ref. 5 by
means of pyroelectric photomodulation method.
For measurements of amplitude-to-frequency Uπ(f)
and phase-to-frequency ϕπ(f) characteristics of the
pyroelectric response the sample under investigation was
connected to the matching stage with step-varying input
impedance from high value ~ 10 GΩ at 20 Hz to low one
~ 100 kΩ [6].
During the measurements the sample was irradiated
by modulated IR-probe from IR LED (light emitting di-
ode) supplied by generator of sinusoidal voltage through
the matching stage.
3. Basic relations
3.1. Single Element PDR
In the case of a free sample of pyroelectric material in
the shape of plate with metal electrodes on its main polar
surfaces [2, 3, 5]
____________
Up = (γ/c)αΦ0 A0Re/d√ 1 + (ωmReCe)2 , (1)
where Φ0 is the incident sinusoidal modulated thermal
flux, ωm = 2πfm , fm is the modulation frequency, A0 is the
area of the irradiated surface, a is the absorptivity,
Ce = CL+ Cs, Re
-1 = RL
-1 + Rs
-1, where RL and CL are the
electrical resistance and capacitance in the external
S.L. Bravina et al.: Thin film PZT-Si structure with quadrant-diagonal electrode system...
91SQO, 5(1), 2002
circuit of the SE, Rs = d/σAe and Cs = εε0Ae/d are the
electrical resistance and capacitance of the SE, Ae is the
electrode area, d is the thickness of the SE, γ, c, ε and σ
are the pyroelectric coefficient, volume heat capacity,
dielectric permittivity and conductivity of SE material
respectively, and ε0 = 8,85⋅10 �12 F/m.
It results from (1) that in the pyroelectric current mode
when ωmReCe << 1
Uπ = Uπ1 = (γ/c)αΦ0A0RL/d (2)
and Uπ1 ∝ (γ/c)/d, Uπ1= const(fm). At that ϕπ = ϕπ1 =
const(fm) and Uπ1 is in phase with thermal flux intensity.
In the pyroelectric voltage mode when ωmReCe >> 1
Uπ = Uπ2 = (γ/cε)αΦ0Α0/ωmε0Ae (3)
and Uπ2 ∝ (γ/cε)/fm , Uπ2= const(d). At that ϕπ = ϕπ2 =
const(fm) and Uπ2 and thermal flux intensity have the
phase shift equals π/2, and so ϕπ2 - ϕπ1=π/2.
As follows from (1) - (3) the mode of Uπ1 measurement
turns to Uπ2 mode with increasing fm value and the transi-
tion frequency fmt is determined by relation ωmtReCe = 1.
At frequencies above fmt only Uπ2 mode is realized.
In the case of arrangement of the SE plate of the thick-
ness d on the heat removing substrate of thickness LS >> d
under the condition that the length of the temperature
wave λT ≤ LS (λT = (a/πfm)1/2, a is the thermal diffusivity)
Uπ1(fm) ∝ fm
1/2, (4a)
Uπ2(fm) ∝ fm
-1/2, (4b)
and for ϕπ1,2 values due to the heat removing action of
substrate appears the addition value equal �(π/4).
The dependences of Uπ1,2(fm) are well described by
(4a) and (4b) when the value of electrode area Ae is near
the same as the substrate surface area AS and for
AS >>Ae the effect of lateral heat spreading into substrate
should be taken into consideration. At that the frequency
dependence of the radius of heat spread area is of the
same type as that for the heat penetration depth and these
factors both determine the dependences of Uπ1,2(fm).
At λT ≤ d the influence of the substrate becomes insig-
nificant and when λT << d instead of (4a) and (4b) the
dependences (2) and (3) for Uπ1,2(fm) of a free pyroactive
plate are realized.
Thus, any thermal non-uniformity placed at the depth
close to λT value is manifested as a peculiarity of Uπ1,2(fm)
and ϕπ1,2(fm). So, in general case, pyroelectric
undersurface probing makes it possible to conclude by
analyzing shapes of Uπ1,2(fm) and ϕπ1,2(fm) whether there
is the thermal non-uniformity and what the character of
pyroactivity distribution is (e.g. near-surface or volumet-
ric).
3.2. Double Element Position Sensitive PDR
In the case of the arrangement of two SE on the
substrate with one common electrode under series or par-
allel connection of these SE the position sensitive PDR
system of differential type is formed. Under simultane-
ous irradiation of both SE their signals of pyroelectric
response are opposite in phase. That is why under the
probe through the boundary which divides the SE elec-
trodes the changes of Uπ1,2 and ϕπ1,2 corresponding to the
change of portion of thermal flux impacted on each SE
are observed.
So, �along surface� pyroelectric scanning makes it
possible to determine the position characteristics of the
system of SE irradiated by one beam-probe.
The position characteristics of Uπ can be determined
by consideration of changes of effective illuminated area
of SE of position sensitive PDR under displacement the
beam-probe from one to another SE.
For the simplest 2-element differential system in the
case of uniform distribution of energy under cross section
of beam-probe of round section of radius r0 and coordi-
nate of the centre of beam cross-section x measured rela-
tive to zero-signal point of the system were obtained the
following dependences Uπ(x):
1. For a side-to-side configuration of SE system when
the direction of displacement of probe beam is perpendicu-
lar to the boundary of electrode division (see Fig. 1b)
________
Uπ(x) ∝ Uπ[(x /r0)√1 - (x/r0)2 + arcsin(x/r0)] (5)
2. For a diagonal configuration of SE system when
the direction of displacement of probe beam makes the
angle α< 900 with the boundary of electrode division (see
Fig. 1c)
___________
Uπ(x) ∝ Uπ[(xsinα/r0)√1 - (xsinα/r0)2 + arcsin(xsinα/r0)]
(6)
3. For a top-to-top triangular configuration of SE
system when the probe-beam is displacing along the di-
rection of heights of triangle electrodes of SE with angle
b at the vertex of the triangles (see Fig. 1d)
__________________________
Uπ(x)∝Uπ[(xsin(β/2)/r0)√1-(xsin(β/2)/r0)2+ arcsin(xsin(β/2)/r0)]
(7)
4. Results and Discussion
4.1. Single Element PDR
The investigated dependences of Uπ1,2(fm) and
ϕπ1,2(fm) are found to be identical for any �e-k� elements
and are presented in Fig. 2a and Fig. 2b. Small scatter of
Uπ1,2 values can be connected with the difference in Cs
and Rs values in consequence of the difference in the de-
gree of unipolarity of the elements and scatter of absorp-
tivity of the electrodes. Repolarization of SE gives 180°-
addition to ϕπ1,2 which corresponds to the change of sign
of pyroelectric reaction of SE and only insignificant vari-
ations of Uπ1,2(fm) and ϕπ1,2(fm) dependences (compare
Fig. 2a and Fig. 2b).
The �substrate effect� is well visible due to the presence
of negative addition to ϕπ1,2 which is about �45°, diffuse
maximum of Uπ1(fm) and fold of Uπ2(fm) (see Fig. 2a, b).
92 SQO, 5(1), 2002
S.L. Bravina et al.: Thin film PZT-Si structure with quadrant-diagonal electrode system...
1 10 100 1000 10000 100000
1
10
100 (i)
Uπ2
Uπ1
1 10 100 1000 10000 100000
-100
0
100
200
300
ϕπ2
ϕπ1
P
y
ro
el
ec
tr
ic
r
e
sp
o
n
se
,
Vµ
P
h
a
se
,
d
e
g
.
Modulation frequency, Hz
P
y
ro
e
le
c
tr
ic
r
es
p
o
n
se
,
Vµ
P
h
a
se
,
d
e
g
.
Modulation frequency, Hz
1 10 100 1000 10000 100000
1
10
100
(h)
Uπ2
Uπ1
1 10 100 1000 10000 100000
-100
0
100
200
300
ϕπ2
ϕπ1
Fig. 2. The dependences of Uπ1,2(f), and ϕπ1,2(f) of 1.9 mm PZT- film with top Pt-electrode and bottom Pt/Ti-electrode on the 350 mm
SiO2/Si-substrate:
a - for i-element after + 35 V, 5 min DC poling;
b - for h-element after - 35 V, 5 min DC poling.
The critical frequency regions connected with the
�substrate effect� should be evaluated by the compari-
son of λT, effective electrode size re and LS values.
Indeed, one of the critical frequency region when lat-
eral heat spreading directed along the substrate surface
decreases is near the frequency fmc
* which value corre-
sponds to the condition λT = re. The estimation of fmc
*
with known electrode area (re = √Ae/π ≈ 0.5 mm) and
thermal diffusivity for crystalline Si (aT ≈ 0.9⋅10-4 m2/s)
gives fmc
∗ ≈ 120 Hz
Another critical frequency region is connected with
the transition from �through substrate mode� ( at which
the heated volume of substrate decreases with increasing
fm value only due to decrease of lateral spreading) to �in-
side substrate mode� (at which the heated volume of
substrate decreases with increasing fm value both due to
decrease of lateral spreading distance and heat penetra-
tion depth along the substrate thickness). It lies near the
frequency fmc
** which corresponds to the condition λT =
LS. The estimation of fmc
** with known thickness of Si-
substrate (LS = 0.35 mm) and thermal diffusivity for Si
gives fmc
** ≈ 230 Hz.
The increase of ϕπ1 value with increasing fm and ap-
proaching ϕπ1 to ϕπ2 corresponds to increase of ωmReCe
value and the transition from Uπ1 mode to Uπ2 mode
The increase of ϕπ1 value with increasing fm and ap-
proaching ϕπ1 to ϕπ2 corresponds to increase of ωmReCe
value and the transition from Uπ1 mode to Uπ2 mode when
Uπ1(fm) and Uπ2(fm) dependences coincide with each other
(see Figs 2a and 2b). The evaluation of the frequency of
this transition fmt estimated by the known RL, Rs and Cs
values gives fmt ≈ 150 Hz.
The critical frequencies fmc
*, fmc
** and fmt are within
the limits of considered peculiarities of Uπ1,2(fm) and
ϕπ1,2(fm).
At higher fm values the pyroelectric voltage mode for
the film on the substrate is realized and the dependence
Uπ2(fm) approaches to that given by formulae (4b). The
deviation of Uπ(fm) behaviour from one corresponding to
(4) may be connected with the frequency dependence of
hopping electrical conduction Gs ∝ fn (were n ~ 1), char-
acteristic for disordered systems [7].
4.2. Double Element Position Sensitive PDR
Obtained coordinate dependences Uπ(x) and ϕπ(x) for
different configurations of the electrodes of SE position
sensitive PDR are presented in Fig. 3. For small x values
the linear region of Uπ(x) is observed in accordance with
(5) � (7). With increasing x the deviation from
S.L. Bravina et al.: Thin film PZT-Si structure with quadrant-diagonal electrode system...
93SQO, 5(1), 2002
-5 -4 -3 -2 -1 0 1 2 3 4 5
0
5
10
15
20
Uπ , µV
(g)
-5 -4 -3 -2 -1 0 1 2 3 4 5
0
100
300
400
Hz20
kHz5
Beam position, mm
ϕπ , deg.
(f)
Hz20
kHz5
b)
Fig. 3. The dependences of Uπ2(x0) and ϕπ2(x0) for different
configurations of the electrodes of SE position-sensitive PDR:
a � side-to-side configuration for g- and h- electrodes;
b � diagonal configuration for f- and g- electrodes;
c � top-to-top triangle configuration for f- and k- electrodes.
linearity corresponds to decrease of position responsivity.
The decrease of Uπ(x) under large x values is the conse-
quence of falling outside the limits of the electrode region by
the probe-beam. The increase of ϕπ observed at that corre-
sponds to the increase of time and delay of the heat flux
under its passing along the surface of PZT film from the
energetic centre of the probe beam to the SE electrode.
Asymmetry of the position characteristics is obviously
connected with the difference of R, C and γ of each ele-
ment of the investigated pair in consequence of the differ-
ent value of the unipolarity degree.
As it follows from the obtained expressions for posi-
tion characteristics the dynamic interval (the length of
the linear region) is maximal for systems of diagonal and
triangular configurations. But systems of side-to-side
configuration possess maximal slope of transformation
(maximal value of position responsivity). So, obtained
experimental characteristics in Fig. 3 agree with those
expected from (5) - (7) for the corresponding systems.
5. Summary
The main characteristics of position-sensitive systems
of PDR with SE based on PZT film on Si-substrate were
investigated for the first time by photopyromodulation
method.
The results of pyroelectric undersurface probing and
�along surface� pyroelectric scanning show that the in-
vestigated quadrant-diagonal system of SE makes it pos-
sible to examine all main types of differential position
sensitive PDR.
94 SQO, 5(1), 2002
S.L. Bravina et al.: Thin film PZT-Si structure with quadrant-diagonal electrode system...
By means of paired combinations of SE were realized
different 2-element single-coordinate PDR variants.
The experimental results are in an agreement with
those expected from the calculations performed for the
corresponding systems.
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546-549 (1973).
3. L. S. Kremenchugsky and O. V. Roitsina, Pyroelectric Detec-
tors of Radiation, (in Russian) , Naukova Dumka, Kiev,
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4. J. C. Burfoot and G. W. Taylor, Polar Dielectrics and Their
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(1979).
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Inst. of Phys. of Acad. Sci. of Ukraine, Kiev (1982).
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