Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufacture...
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| Datum: | 2002 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121122 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector / S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 89-94. — Бібліогр.: 7 назв. — англ. |