On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior

On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior

Some peculiarities in the rapid portion of the voltage dependences of luminance and transferred charge as well as in its aging behavior in ZnS:Mn thin film electroluminescent devices made by different deposition techniques have been revealed. The devices with nearly the same Mn concentration (~1 at....

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Datum:2002
Hauptverfasser: Vlasenko, N.A., Denisova, Z.L., Kononets, Ya.F., Veligura, L.I., Chumachkova, M.M., Tsyrkunov, Yu.A., Soininen, E.L., Tornqvist, R.O., Vasame, K.M.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/121128
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior / N.A. Vlasenko, Z.L. Denisova, Ya.F. Kononets, L.I. Veligura, M.M. Chumachkova, Yu.A. Tsyrkunov, E.L. Soininen, R.O. Tornqvist, K.M. Vasame // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 58-62. — Бібліогр.: 12 назв. — англ.

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