Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. It was found that the epilayers with thicknesses above some value (>1 μm...
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| Datum: | 2002 |
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| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121182 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers / G.N. Semenova, E.F. Venger, N.O. Korsunska, V.P. Klad’ko, L.V. Borkovska, M.P. Semtsiv, M.B. Sharibaev, V.I. Kushnirenko, Yu.G. Sadofyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 133-137. — Бібліогр.: 13 назв. — англ. |