Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum
Cd₀.₂₅Hg₀.₇₅Se films received by laser evaporation method in conditions of static vacuum are investigated. Optimum temperature of a substrate is ascertained using structural and electrophysical measurements. It is shown that the used method enables one to receive films of CdxHg₁₋xSe solid solutions...
Gespeichert in:
| Datum: | 2000 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121216 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum / B.N. Gritsook, I.M. Fodchoock, S.V. Nichiy, U.S. Paranchich, R.L. Politanskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 460-462. — Бібліогр.: 9 назв. — англ. |