Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals
The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge carrier in donor-acceptor states and, b) transfer of evolved energy by means of C...
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| Datum: | 2002 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121236 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals / B.G. Tagiyev, R.S. Madatov, F.Sh. Aydayev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 261-263. — Бібліогр.: 5 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge carrier in donor-acceptor states and, b) transfer of evolved energy by means of Coulomb interaction. The concentration of majority carriers in the current step field (6.26•10¹¹ cm⁻³) and activation energy of impurities (0.14 eV) have been determined using data obtained. |
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