Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
The influence of the annealing (at Тanneal. = 1200 °C) and different rates of cooling (from Тanneal. to room temperature) on magnetoresistance and Hall effect of the n-Si:P monocrystals with different specific resistance, which were grown by means of various technologies, have been investigated. It...
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| Datum: | 2002 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121238 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance / P.I. Baranskyy, G.P. Gaydar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 231-234. — Бібліогр.: 15 назв. — англ. |