Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the specific athermal microwave exposure, proposed was an integrated approach that i...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Цитувати: | Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 452-455. — Бібліогр.: 13 назв. — англ. |
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irk-123456789-1212742017-06-14T03:07:03Z Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film Okhrimenko, O.B We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the specific athermal microwave exposure, proposed was an integrated approach that is a combination of several processes that are described by various models. Interaction of processes caused by the resonant interaction of microwave radiation with the intrinsic oscillations of dislocations, which can lead to dislocation motion, has been considered. The length of dislocations, for which the condition of the resonant interaction is fulfilled, has been estimated. It has been shown that the combination of the considered processes can lead to appearance of additional centers of light absorption or scattering, which is manifested in the spectra of optical absorption and photoluminescence of the structures wide-gap semiconductor – oxide film 2015 Article Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 452-455. — Бібліогр.: 13 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.452 PACS 61.72.Ff, 68.35.-p, 78.70.Gq http://dspace.nbuv.gov.ua/handle/123456789/121274 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the specific athermal microwave exposure, proposed was an integrated approach that is a combination of several processes that are described by various models. Interaction of processes caused by the resonant interaction of microwave radiation with the intrinsic oscillations of dislocations, which can lead to dislocation motion, has been considered. The length of dislocations, for which the condition of the resonant interaction is fulfilled, has been estimated. It has been shown that the combination of the considered processes can lead to appearance of additional centers of light absorption or scattering, which is manifested in the spectra of optical absorption and photoluminescence of the structures wide-gap semiconductor – oxide film |
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Okhrimenko, O.B Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Okhrimenko, O.B |
| author_sort |
Okhrimenko, O.B |
| title |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_short |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_full |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_fullStr |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_full_unstemmed |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
| title_sort |
phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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2015 |
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http://dspace.nbuv.gov.ua/handle/123456789/121274 |
| citation_txt |
Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 452-455. — Бібліогр.: 13 назв. — англ. |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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2025-07-08T19:30:51Z |
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2025-07-08T19:30:51Z |
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1837108353771241472 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 4. P. 452-455.
doi: 10.15407/spqeo18.04.452
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
452
PACS 61.72.Ff, 68.35.-p, 78.70.Gq
Phenomenological model of athermal interaction of microwave
radiation with the structures wide-gap semiconductor – oxide film
O.B. Okhrimenko
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03680 Kyiv, Ukraine
Abstract. We propose a phenomenological model that explains the changes in the optical
spectra of the structures wide gap semiconductor – oxide film, which takes place as a
result of short-term microwave treatment. To explain the specific athermal microwave
exposure, proposed was an integrated approach that is a combination of several processes
that are described by various models. Interaction of processes caused by the resonant
interaction of microwave radiation with the intrinsic oscillations of dislocations, which
can lead to dislocation motion, has been considered. The length of dislocations, for which
the condition of the resonant interaction is fulfilled, has been estimated. It has been
shown that the combination of the considered processes can lead to appearance of
additional centers of light absorption or scattering, which is manifested in the spectra of
optical absorption and photoluminescence of the structures wide-gap semiconductor –
oxide film.
Keywords: wide gap semiconductor, oxide film, athermal interaction, microwave
radiation, dislocation.
Manuscript received 23.04.15; revised version received 04.08.15; accepted for
publication 28.10.15; published online 03.12.15.
1. Introduction
Now, there is a sufficient number of experimental results
showing the specific athermal effect of microwave
radiation on materials. In particular, in the review [1]
non-thermal action of microwave radiation on ceramic
materials is considered.
So, in the papers [2-6] it has been shown that the
short-term treatment of the structures oxide –
semiconductor and crystalline semiconductors with
microwave radiation of the frequency 2.45 GHz results
in the increase of transmission in the optical range,
appearance of additional bands in the photoluminescence
spectra (PL) spectra of similar structures or
redistribution of the intensity of PL bands [2-6]. And
here, evaluation of the thermal short-term action of
microwave radiation with the frequency 2.45 GHz,
which was used in [2-6] in processing the structures
oxide – semiconductor and crystalline semiconductors,
has shown that the maximum heating of the sample
during irradiation did not exceed 2 degrees.
However, there is still no model that would
definitely explain the mechanism of non-thermal effects
on the structures oxide film – semiconductor.
Considered in this work are the processes that
explain the mechanism of athermal microwave effects
on the structures wide-gap semiconductor – oxide film.
Since the layers are localized near the interface wide-gap
semiconductor – oxide film, there always are misfit
stresses due to the mismatch of parameters
characterizing the crystal lattices of oxide and substrate
as well as thermal stresses arising during formation of
oxide films. Dislocations will inevitably appear in these
structures. Therefore, when considering the mechanisms
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 4. P. 452-455.
doi: 10.15407/spqeo18.04.452
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
453
of athermal microwave action on the structure, we will
focus on the processes related with the possibility of
dislocation motion under the influence of microwave
radiation.
2. The process of mass transfer
In [1], the non-thermal effect of microwave field is
explained by the phenomenon of mass transfer and
related with it phase transitions in solids. According to
the proposed model describing the diffusion-drift
dynamics of vacancies flow under the influence of the
electric component of the microwave field, the effects
that lead to arising the directional mass transfer are
caused by formation of the space charge near the
structural inhomogeneities in the crystal bulk. Here, the
forces similar in their nature to averaged ponderomotive
forces act on the defects having charge.
As another reason for existence of non-vanishing
after averaging over the period of the field of matter
flows, the primary one-way permeability of the body
surface for the flows of vacancies is considered. With
substantial asymmetry of permeability, the influence of
the field on mass transfer processes in a homogeneous
crystal under conditions typical for microwave treatment
of materials can be significant.
The averaged ponderomotive effect is equivalent
(in the sense of generating the quasi-stationary flows of
mass) to the action of stresses and leads to compression
of the crystalline body along the vector of the electric
field [1]. Mechanical stresses caused by exceed the
radiation pressure of field by N
-1
times, where N is the
relative concentration of vacancies in the crystal [1]. It is
related to the fact that the electric field acts only on the
atoms neighboring to the vacant lattice point and
therefore having uncompensated charge. On the other
hand, these atoms are able to move during diffusion
processes in the solid phase. In contrast to it, the effect
of mechanical stress is applied to all the atoms of the
crystal, the majority of which cannot be moved. Since
the concentration of vacancies depends on the
temperature, this effect can explain the decrease in the
activation energy of mass transfer processes under
microwave exposure observed in experiments [1].
The effect of the action of the averaged
ponderomotive force is greatly enhanced in the case of
an inhomogeneous structure of material as well as in
materials, in which there are mobile defects (e.g.,
vacancies) possessing substantially higher electric
susceptibility as compared with the average unit of the
crystal lattice. A necessary condition for ponderomotive
effects is the presence of macroscopic structural
inhomogeneities in material, such as free surfaces or
boundaries between the crystalline grains. Estimations
show that the averaged ponderomotive effect can
significantly affect the diffusion processes in
polycrystalline materials [1].
According to [7], even a small rearrangement of
atoms near dislocation can cause the displacement of the
dislocation line by the interatomic distance, so the
decrease in activation energy of mass transfer processes
under microwave exposure should lead to a separation of
dislocations from stoppers.
3. The resonant interaction of microwave radiation
with a dislocation
In [8], we considered the model of the resonant
interaction of microwave radiation with a dislocation.
According to [7], the equation for the displacement
u(y, t) of the dislocation loop with the length l, rigidly
attached to the ends and oscillating (similar to the elastic
string) under the action of periodic external influence,
can be written as
2
2
b
y
u
uBuml
(1),
where ml is the effective mass of dislocation per unit of
length, – effective line tension of the dislocation, =
0e
it
– oscillatory shear stress caused by external
influence, b – absolute value of the Burgers vector. The
boundary conditions are as follows u(0, t) = u(l, t) = 0.
The parameter B in the expression (1) corresponds to the
attenuation constant. The term
2
2
y
u
describes the
restoring force per unit of length. The value is
estimated from the expression
~ ½ Gb
2
, (2)
where G is the shear modulus.
The value ml is determined as
ml. b
2
, (3),
where is the density of material.
According to [7], for the dislocation loop the
dependence of u(y, t) can be described by the expression
u(y, t) = A 0 (ly – y
2
) e
it
(4)
where A = / 2.
After substituting Eq. (4) to Eq. (1) and integrating
from y = 0 to y = l we obtain
bAl
Al
Bi
Al
ml 2
66
33
2 (5)
or
1
2
0
2
1
2
i
b
A (6)
where
2
2
0
12
lml
(7)
and
12
2Bl
. (8)
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 4. P. 452-455.
doi: 10.15407/spqeo18.04.452
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
454
When attenuation is weak, the value
0 = 0/2 (9)
plays the role of the resonant frequency, at which |A|
reaches its maximum value limited only by the
attenuation constant.
If substitute the expressions (2) and (3) to (7) for
the frequency 0, we will obtain:
222
2
2
0
6
b
Gb
2
1
12
l
G
l
. (10)
From (7), we can estimate the size of dislocations,
for which the microwave frequency = 2.45 GHz used
in our experiments will be resonant. For the case = 0
we obtain
22
2
0
2
3
G
l . (11)
Substituting the values of G and ρ for silicon
carbide and oxide films of SiO2, TiO2, Gd2O3, Er2O3 into
Eq. (11), we conclude that the frequency = 2.4510
9
s
–
1
is resonant for the dislocations with the length l 10
–
4
сm.
Thus, the resonant interaction of the microwave
radiation with the frequency = 2.4510
9
s
–1
can lead to
detachment of the dislocations with l10
-4
сm and their
movement both in the silicon carbide substrate and the
oxide layer. The movement of dislocations, in turn, will
lead to change in the distribution of internal stresses in
the structure, and, hence, the subsequent change in the
number and configuration of dislocations.
4. Parametric resonance
As it is well known [9, 10], in the case of parametric
resonance, periodic modulation of some parameter of the
system can result in oscillations of the growing nature,
the equilibrium state of the system becomes unstable,
and leaving this state has the character of oscillations
with a progressively increasing amplitude. In the case of
dislocation, the length of dislocation can be the
modulated parameter because the atoms that are stoppers
for dislocation, in turn, themselves are a source of
vibrations. The most intense oscillations are excited in
the case when the frequency of parameter modulation is
twice exceeded the intrinsic frequency of the system.
More accurate calculations [9, 10] show that the
swinging the oscillations takes place in the whole
frequency range around the frequency 20. If to
introduce the notation = 20+, where is small
detuning, it is possible to show that in the absence of
friction the parametric resonance arises within the
frequency range
22
00
hh
. (12)
In the presence of attenuation the value is
determined as
2
2
0 4
2
h
, (13)
where is the attenuation parameter.
Therefore, due to the parametric resonance, detach
of dislocations not only with the length l determined by
the expression (11), but also dislocations with the length
l1 ~ 2l ~210
–4
сm from stoppers may occur.
Moreover, oscillations of dislocations with the
frequency about 10
9
Hz can be considered as
hypersonic oscillations. At the same time, the
propagation of hypersound in the crystal can lead to
phenomena similar to the effect of “radiation shaking”:
the appearance of hypersonic waves affects the spatial
remote defects, causing their diffusion or restructuring.
Also, the interaction of waves of elastic stresses with
the existing point defects can lead to activationless
migration of interstitial atoms, to influence on the
probability of nonradiative processes in the
luminescence centers, etc. [11].
5. The process of redistribution centers
of emission and absorption
Since the binding energy between the impurity atom and
dislocation is a function of the position of the defect
relatively to dislocation [7], the motion of the dislocation
caused by microwave exposure (the processes leading to
the motion of dislocations as a result of microwave
exposure are discussed in Sections 1-3) should lead to a
redistribution of the irradiation centers and absorption in
the structures.
Due to the presence of free or unsaturated bonds in
the dislocation core [12] when the distance between
dislocations and impurity atom is changed, as a result of
the movement of dislocations, the conditions may arise
when electron tunneling is possible, in particular, from the
impurity to a dislocation, which can lead to a change in
the charge state of the impurity. Similarly to the impurity
atoms, vacancies and interstitials are also attracted to the
dislocations, and the intrinsic point defects can be fully
absorbed by the edge dislocations [7].
In addition, according to [7] in the athermal
processes the motion of dislocations can result in the
appearance of non-equilibrium point defects.
In the result of interaction of the dislocations with
impurities and lattice defects in the band gap of the
crystal, the related energy levels appear. Therefore, the
band structure near the dislocation is extremely
complicated [12]. In general, the dislocation creates
isolated centers that can act as centers of both radiative
and nonradiative electron-hole recombination [12].
According to [13], the energy released in nonradiative
recombination of electron-hole pair in SiC is sufficient
for that atom to overcome barrier impeding its
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015. V. 18, N 4. P. 452-455.
doi: 10.15407/spqeo18.04.452
© 2015, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
455
displacement to another position. That is, there is a local
rearrangement of the lattice of the hexagonal polytype in
the cubic one, and cubic polytype layer is formed [13].
6. Conclusion
Thus, being based on the considering processes of
interaction of microwaves radiation with dislocations,
which result in changes in the number and configuration
of dislocations, one can conclude that the microwave
exposure should lead to a redistribution of
recombination centers in the structures semiconductor –
oxide layer. It, in turn, causes appearance of additional
bands in the photoluminescence spectra or to
redistribution of intensities inherent to separate bands in
the photoluminescence spectrum, as well as to changes
in the spectra of optical transmission.
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