Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film
We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the specific athermal microwave exposure, proposed was an integrated approach that i...
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| Datum: | 2015 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121274 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 452-455. — Бібліогр.: 13 назв. — англ. |