Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂
The results of density functional calculations of 2H-NbSe₂ electron energy spectrum with Se vacancies at various concentrations are presented in the article. It is found that volume of the hole-like Fermi surface tends to decrease with increasing concentration of the vacancies. At vacancy concentrat...
Gespeichert in:
| Datum: | 2016 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2016
|
| Schriftenreihe: | Functional Materials |
| Schlagworte: | |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/121304 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂ / A.A.Mamalui, O.N.Andreeva, A.V.Sinelnik // Functional Materials. — 2016. — Т. 23, № 3. — С. 357-363. — Бібліогр.: 24 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The results of density functional calculations of 2H-NbSe₂ electron energy spectrum with Se vacancies at various concentrations are presented in the article. It is found that volume of the hole-like Fermi surface tends to decrease with increasing concentration of the vacancies. At vacancy concentrations corresponding to the beginning of the phase transition 2H-NbSe₂ -> 4H-NbSe₂ the disappearance of carrier group occurs, that is an electronic topological transition of order 2.5 takes place. |
|---|